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K6T4008V1C Datasheet(PDF) 5 Page - Samsung semiconductor

Part No. K6T4008V1C
Description  512Kx8 bit Low Power and Low Voltage CMOS Static RAM
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K6T4008V1C Datasheet(HTML) 5 Page - Samsung semiconductor

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K6T4008V1C, K6T4008U1C Family
CMOS SRAM
Revision 1.0
January 1999
5
AC CHARACTERISTICS (K6T4008V1C Family: Vcc=3.0~3.6V, K6T4008U1C Family: Vcc=2.7~3.3V
Commercial product:: TA=0 to 70
°C, Industrial product: TA=-40 to 85°C)
Parameter List
Symbol
Speed Bins
Units
70ns
85ns
100ns
Min
Max
Min
Max
Min
Max
Read
Read cycle time
tRC
70
-
85
-
100
-
ns
Address access time
tAA
-
70
-
85
-
100
ns
Chip select to output
tCO
-
70
-
85
-
100
ns
Output enable to valid output
tOE
-
35
-
40
-
50
ns
Chip select to low-Z output
tLZ
10
-
10
-
10
-
ns
Output enable to low-Z output
tOLZ
5
-
5
-
5
-
ns
Chip disable to high-Z output
tHZ
0
25
0
25
0
30
ns
Output disable to high-Z output
tOHZ
0
25
0
25
0
30
ns
Output hold from address change
tOH
10
-
10
-
15
-
ns
Write
Write cycle time
tWC
70
-
85
-
100
-
ns
Chip select to end of write
tCW
60
-
70
-
80
-
ns
Address set-up time
tAS
0
-
0
-
0
-
ns
Address valid to end of write
tAW
60
-
70
-
80
-
ns
Write pulse width
tWP
55
-
55
-
70
-
ns
Write recovery time
tWR
0
-
0
-
0
-
ns
Write to output high-Z
tWHZ
0
25
0
25
0
30
ns
Data to write time overlap
tDW
30
-
35
-
40
-
ns
Data hold from write time
tDH
0
-
0
-
0
-
ns
End write to output low-Z
tOW
5
-
5
-
5
-
ns
CL1)
1. Including scope and jig capacitance
AC OPERATING CONDITIONS
TEST CONDITIONS(Test Load and Input/Output Reference)
Input pulse level: 0.4 to 2.2V
Input rising and falling time: 5ns
Input and output reference voltage:1.5V
Output load(see right): CL=100pF+1TTL
CL1)=30pF+1TTL
1. 70ns product
DATA RETENTION CHARACTERISTICS
1. Industrial product = 20
µA
Item
Symbol
Test Condition
Min
Typ
Max
Unit
Vcc for data retention
VDR
CS
≥Vcc-0.2V
2.0
-
3.6
V
Data retention current
IDR
Vcc=3.0V, CS
≥Vcc-0.2V
-
0.5
151)
µA
Data retention set-up time
tSDR
See data retention waveform
0
-
-
ms
Recovery time
tRDR
5
-
-


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