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K5T6432YT Datasheet(PDF) 20 Page - Samsung semiconductor |
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K5T6432YT Datasheet(HTML) 20 Page - Samsung semiconductor |
20 / 40 page MCP MEMORY K5T6432YT(B)M Revision 1.0 November 2001 - 20 - VCC F-RP WE F-CE F-Vcc Power up / dowm Timing tVCS Read /Write Inhibit VIH VIL 3.0V Vss VIH VIL VIH VIL Read /Write Inhibit Read /Write Inhibit tPS tPS AC Waveforms for Read Operation and Test Conditions ta(AD) Address tRC ta(CE) tDF(CE) tOEH tDF(OE) ta(OE) tOLZ tCLZ High-Z High-Z tOH tPHZ tPS Address OE F-CE VIH VIL VIH VIL VIH VIL WE F-RP DATA VIH VIL VIH VIL VIH VIL TEST CONDITIONS FOR AC CHARACTERISTICS Input Voltage: VIL=0V, VIH=Flash VCC Input Rise and Fall Times: ≤5ns Reference Voltage at timing measurement: (Flash VCC)/2 Output Load: 1TTL gate + CL(30pF) or DUT 1.3V 1N914 3.3kohm |
Similar Description - K5T6432YT |
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