K5T6432YT datasheet(20/40 Pages) SAMSUNG

Part #	K5T6432YT

Description	Multi-Chip Package MEMORY 64M Bit 4Mx16 Four Bank NOR Flash Memory / 32M Bit 2Mx16 UtRAM

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Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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20 / 40 page

MCP MEMORY

K5T6432YT(B)M

Revision 1.0

November 2001

- 20 -

VCC

F-RP

WE

F-CE

F-Vcc Power up / dowm Timing

tVCS

Read /Write Inhibit

VIH

VIL

3.0V

Vss

VIH

VIL

VIH

VIL

Read /Write Inhibit

tPS

AC Waveforms for Read Operation and Test Conditions

ta(AD)

Address

tRC

ta(CE)

tDF(CE)

tOEH

tDF(OE)

ta(OE)

tOLZ

tCLZ

High-Z

tOH

tPHZ

tPS

Address

OE

F-CE

VIH

VIL

VIH

VIL

VIH

VIL

WE

F-RP

DATA

VIH

VIL

VIH

VIL

VIH

VIL

TEST CONDITIONS

FOR AC CHARACTERISTICS

Input Voltage: VIL=0V, VIH=Flash VCC

Input Rise and Fall Times:

≤5ns

Reference Voltage

at timing measurement: (Flash VCC)/2

Output Load: 1TTL gate + CL(30pF)

or

DUT

1.3V

1N914

3.3kohm

Similar Description - K5T6432YT

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K5T6432YT Datasheet(PDF) 20 Page - Samsung semiconductor

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