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K4E661612C-TL60 Datasheet(PDF) 4 Page - Samsung semiconductor

Part # K4E661612C-TL60
Description  4M x 16bit CMOS Dynamic RAM with Extended Data Out
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K4E661612C-TL60 Datasheet(HTML) 4 Page - Samsung semiconductor

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CMOS DRAM
K4E661612C,K4E641612C
*Note :
ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open.
ICC is specified as an average current. In ICC1, ICC3 and ICC6, address can be changed maximum once while RAS=VIL. In ICC4,
address can be changed maximum once within one EDO mode cycle time,
tHPC.
DC AND OPERATING CHARACTERISTICS (Continued)
ICC1* : Operating Current (RAS and UCAS, LCAS, Address cycling @
tRC=min.)
ICC2 : Standby Current (RAS=UCAS=LCAS=W=VIH)
ICC3* : RAS-only Refresh Current (UCAS=LCAS=VIH, RAS, Address cycling @
tRC=min.)
ICC4* : Extended Data Out Mode Current (RAS=VIL, UCAS or LCAS, Address cycling @
tHPC=min.)
ICC5 : Standby Current (RAS=UCAS=LCAS=W=VCC-0.2V)
ICC6* : CAS-Before-RAS Refresh Current (RAS and UCAS or LCAS cycling @
tRC=min)
ICC7 : Battery back-up current, Average power supply current, Battery back-up mode
Input high voltage(VIH)=VCC-0.2V, Input low voltage(VIL)=0.2V, UCAS, LCAS=CAS-before-RAS cycling or 0.2V
W, OE=VIH, Address=Don
′t care, DQ=Open, TRC=31.25us
ICCS : Self Refresh Current
RAS=UCAS=LCAS=0.2V, W=OE=A0 ~ A12(A11)=VCC-0.2V or 0.2V, DQ0 ~ DQ15=VCC-0.2V, 0.2V or Open
Symbol
Power
Speed
Max
Units
K4E661612C
K4E641612C
ICC1
Don
′t care
-45
-50
-60
90
80
70
130
120
110
mA
mA
mA
ICC2
Normal
L
Don
′t care
1
1
1
1
mA
mA
ICC3
Don
′t care
-45
-50
-60
90
80
70
130
120
110
mA
mA
mA
ICC4
Don
′t care
-45
-50
-60
100
90
80
100
90
80
mA
mA
mA
ICC5
Normal
L
Don
′t care
0.5
200
0.5
200
mA
uA
ICC6
Don
′t care
-45
-50
-60
130
120
110
130
120
110
mA
mA
mA
ICC7
L
Don
′t care
350
350
uA
ICCS
L
Don
′t care
350
350
uA


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