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K4S281632M Datasheet(PDF) 5 Page - Samsung semiconductor

Part No. K4S281632M
Description  128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
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Maker  SAMSUNG [Samsung semiconductor]
Homepage  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K4S281632M Datasheet(HTML) 5 Page - Samsung semiconductor

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K4S281632M
CMOS SDRAM
Rev. 0.0 Aug. 1999
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, TA = 0 to 70
°C)
Parameter
Symbol
Test Condition
CAS
Latency
Version
Unit
Note
-80
-1H
-1L
-10
Operating current
(One bank active)
ICC1
Burst length = 1
tRC
≥ tRC(min)
IOL = 0 mA
130
120
120
115
mA
1
Precharge standby current in
power-down mode
ICC2P
CKE
VIL(max), tCC = 15ns
1
mA
ICC2PS
CKE & CLK
VIL(max), tCC = ∞
1
Precharge standby current in
non power-down mode
ICC2N
CKE
≥ VIH(min),CS ≥ VIH(min),tCC=15ns
Input signals are changed one time during 30ns
15
mA
ICC2NS
CKE
≥ VIH(min), CLK
VIL(max), tCC = ∞
Input signals are stable
7
Active standby current in
power-down mode
ICC3P
CKE
VIL(max), tCC = 15ns
5
mA
ICC3PS
CKE & CLK
VIL(max), tCC = ∞
5
Active standby current in
non power-down mode
(One bank active)
ICC3N
CKE
≥ VIH(min), CS ≥ VIH(min), tCC = 15ns
Input signals are changed one time during 30ns.
30
mA
ICC3NS
CKE
≥ VIH(min), CLK
VIL(max), tCC = ∞
Input signals are stable
20
mA
Operating current
(Burst mode)
ICC4
IOL = 0 mA
Page burst
tCCD = 2CLKs
3
170
145
145
145
mA
1
2
135
145
135
135
Refresh current
ICC5
tRC
≥ tRC(min)
200
165
mA
2
Self refresh current
ICC6
CKE
0.2V
C
1.5
mA
3
L
800
uA
4
1. Measured with outputs open.
2. Refresh period is 64ms.
3. K4S281632M-TC**
4. K4S281632M-TL**
Notes :


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