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K4S281632B Datasheet(PDF) 4 Page - Samsung semiconductor

Part No. K4S281632B
Description  128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
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Maker  SAMSUNG [Samsung semiconductor]
Homepage  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K4S281632B Datasheet(HTML) 4 Page - Samsung semiconductor

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K4S281632B
Rev. 0.0 Aug. 1999
CMOS SDRAM
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Voltage on any pin relative to Vss
VIN, VOUT
-1.0 ~ 4.6
V
Voltage on VDD supply relative to Vss
VDD, VDDQ
-1.0 ~ 4.6
V
Storage temperature
TSTG
-55 ~ +150
°C
Power dissipation
PD
1
W
Short circuit current
IOS
50
mA
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
Note :
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to VSS = 0V, TA = 0 to 70
°C)
Parameter
Symbol
Min
Typ
Max
Unit
Note
Supply voltage
VDD, VDDQ
3.0
3.3
3.6
V
Input logic high voltage
VIH
2.0
3.0
VDD+0.3
V
1
Input logic low voltage
VIL
-0.3
0
0.8
V
2
Output logic high voltage
VOH
2.4
-
-
V
IOH = -2mA
Output logic low voltage
VOL
-
-
0.4
V
IOL = 2mA
Input leakage current
ILI
-10
-
10
uA
3
1. VIH (max) = 5.6V AC.The overshoot voltage duration is
≤ 3ns.
2. VIL (min) = -2.0V AC. The undershoot voltage duration is
≤ 3ns.
3. Any input 0V
≤ VIN ≤ VDDQ,
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
Notes :
CAPACITANCE (VDD = 3.3V, TA = 23
°C, f = 1MHz, VREF =1.4V ± 200 mV)
Pin
Symbol
Min
Max
Unit
Note
Clock
CCLK
2.5
4.0
pF
1
RAS, CAS, WE, CS, CKE, DQM
CIN
2.5
5.0
pF
2
Address
CADD
2.5
5.0
pF
2
DQ0 ~ DQ15
COUT
4.0
6.5
pF
3
1. -75 only specify a maximum value of 3.5pF
2. -75 only specify a maximum value of 3.8pF
3. -75 only specify a maximum value of 6.0pF
Notes :


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