Electronic Components Datasheet Search
  English  ▼

Delete All
ON OFF
ALLDATASHEET.COM

X  

Preview PDF Download HTML

K4S281632B-N Datasheet(PDF) 6 Page - Samsung semiconductor

Part No. K4S281632B-N
Description  2M x 16Bit x 4 Banks Synchronous DRAM in sTSOP
Download  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K4S281632B-N Datasheet(HTML) 6 Page - Samsung semiconductor

  K4S281632B-N Datasheet HTML 1Page - Samsung semiconductor K4S281632B-N Datasheet HTML 2Page - Samsung semiconductor K4S281632B-N Datasheet HTML 3Page - Samsung semiconductor K4S281632B-N Datasheet HTML 4Page - Samsung semiconductor K4S281632B-N Datasheet HTML 5Page - Samsung semiconductor K4S281632B-N Datasheet HTML 6Page - Samsung semiconductor K4S281632B-N Datasheet HTML 7Page - Samsung semiconductor K4S281632B-N Datasheet HTML 8Page - Samsung semiconductor  
Zoom Inzoom in Zoom Outzoom out
 6 / 8 page
background image
K4S281632B-N
CMOS SDRAM
shrink-TSOP
AC CHARACTERISTICS (AC operating conditions unless otherwise noted)
Parameter
Symbol
-1H
-1L
Unit
Note
Min
Max
Min
Max
CLK cycle time
CAS latency=3
tCC
10
1000
10
1000
ns
1
CAS latency=2
10
12
CLK to valid
output delay
CAS latency=3
tSAC
6
6
ns
1,2
CAS latency=2
6
7
Output data
hold time
CAS latency=3
tOH
3
3
ns
2
CAS latency=2
3
3
CLK high pulse width
tCH
3
3
ns
3
CLK low pulse width
tCL
3
3
ns
3
Input setup time
tSS
2
2
ns
3
Input hold time
tSH
1
1
ns
3
CLK to output in Low-Z
tSLZ
1
1
ns
2
CLK to output
in Hi-Z
CAS latency=3
tSHZ
6
6
ns
CAS latency=2
6
7
1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf) = 1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered,
i.e., [(tr + tf)/2-1]ns should be added to the parameter.
Notes :
DQ BUFFER OUTPUT DRIVE CHARACTERISTICS
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Notes
Output rise time
trh
Measure in linear
region : 1.2V ~ 1.8V
1.37
4.37
Volts/ns
3
Output fall time
tfh
Measure in linear
region : 1.2V ~ 1.8V
1.30
3.8
Volts/ns
3
Output rise time
trh
Measure in linear
region : 1.2V ~ 1.8V
2.8
3.9
5.6
Volts/ns
1,2
Output fall time
tfh
Measure in linear
region : 1.2V ~ 1.8V
2.0
2.9
5.0
Volts/ns
1,2
1. Rise time specification based on 0pF + 50
Ω to VSS, use these values to design to.
2. Fall time specification based on 0pF + 50
Ω to VDD, use these values to design to.
3. Measured into 50pF only, use these values to characterize to.
4. All measurements done with respect to VSS.
Notes :


Html Pages

1  2  3  4  5  6  7  8 


Datasheet Download

Go To PDF Page

Related Electronics Part Number

Part No.DescriptionHtml ViewManufacturer
KM416S4030C 1M x 16Bit x 4 Banks Synchronous DRAM 1  2  3  4  5  More Samsung semiconductor
TTS3816B4E 2M x 16Bit x 4 Banks synchronous DRAM 1  2  3  4  5  More List of Unclassifed Manufacturers
KM416S1120D 512K x 16bit x 2 Banks Synchronous DRAM LVTTL 1  2  3  4  5  More List of Unclassifed Manufacturers
HY57V641620HG-I 4 Banks x 1M x 16Bit Synchronous DRAM 1  2  3  4  5  More Hynix Semiconductor
K4S161622D 512K x 16Bit x 2 Banks Synchronous DRAM 1  2  3  4  5  More Samsung semiconductor
HY57V641620HG 4 Banks x 1M x 16Bit Synchronous DRAM 1  2  3  4  5  More Hynix Semiconductor
HY57V561620B 4 Banks x 4M x 16Bit Synchronous DRAM 1  2  3  4  5  More Hynix Semiconductor
HY57V651620B 4 Banks x 1M x 16Bit Synchronous DRAM 1  2  3  4  5  More Hynix Semiconductor
HY57V561620C 4 Banks x 4M x 16Bit Synchronous DRAM 1  2  3  4  5  More Hynix Semiconductor
KM416S8030 2M x 16Bit x 4 Banks Synchronous DRAM 1  2  3  4  5  More Samsung semiconductor

Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn