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K4F641612C Datasheet(PDF) 4 Page - Samsung semiconductor |
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K4F641612C Datasheet(HTML) 4 Page - Samsung semiconductor |
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4 / 35 page  CMOS DRAM K4F661612C, K4F641612C *Note : ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open. ICC is specified as an average current. In ICC1, ICC3 and ICC6, address can be changed maximum once while RAS=VIL. In ICC4, address can be changed maximum once within one fast page mode cycle time, tPC. DC AND OPERATING CHARACTERISTICS (Continued) ICC1* : Operating Current (RAS and UCAS, LCAS, Address cycling @ tRC=min.) ICC2 : Standby Current (RAS=UCAS=LCAS=W=VIH) ICC3* : RAS-only Refresh Current (UCAS=LCAS=VIH, RAS, Address cycling @ tRC=min.) ICC4* : Fast Page Mode Current (RAS=VIL, UCAS or LCAS, Address cycling @ tPC=min.) ICC5 : Standby Current (RAS=UCAS=LCAS=W=VCC-0.2V) ICC6* : CAS-Before-RAS Refresh Current (RAS and UCAS or LCAS cycling @ tRC=min) ICC7 : Battery back-up current, Average power supply current, Battery back-up mode Input high voltage(VIH)=VCC-0.2V, Input low voltage(VIL)=0.2V, UCAS, LCAS=CAS-before-RAS cycling or 0.2V, W, OE=VIH, Address=Don ′t care, DQ=Open, TRC=31.25us ICCS : Self Refresh Current RAS=UCAS=LCAS=0.2V, W=OE=A0 ~ A12(A11)=VCC-0.2V or 0.2V, DQ0 ~ DQ15=VCC-0.2V, 0.2V or Open Symbol Power Speed Max Units K4F661612C K4F641612C ICC1 Don ′t care -45 -50 -60 90 80 70 130 120 110 mA mA mA ICC2 Normal L Don ′t care 1 1 1 1 mA mA ICC3 Don ′t care -45 -50 -60 90 80 70 130 120 110 mA mA mA ICC4 Don ′t care -45 -50 -60 70 60 50 70 60 50 mA mA mA ICC5 Normal L Don ′t care 0.5 200 0.5 200 mA uA ICC6 Don ′t care -45 -50 -60 130 120 110 130 120 110 mA mA mA ICC7 L Don ′t care 350 350 uA ICCS L Don ′t care 350 350 uA |
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