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K4F661612B Datasheet(PDF) 3 Page - Samsung semiconductor

Part No. K4F661612B
Description  4M x 16bit CMOS Dynamic RAM with Fast Page Mode
Download  35 Pages
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Maker  SAMSUNG [Samsung semiconductor]
Homepage  http://www.samsung.com/Products/Semiconductor
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K4F661612B Datasheet(HTML) 3 Page - Samsung semiconductor

 
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CMOS DRAM
K4F661612B,K4F641612B
ABSOLUTE MAXIMUM RATINGS
* Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to
the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
Parameter
Symbol
Rating
Units
Voltage on any pin relative to VSS
VIN,VOUT
-0.5 to +6.5
V
Voltage on VCC supply relative to VSS
VCC
-0.5 to +4.6
V
Storage Temperature
Tstg
-55 to +150
°C
Power Dissipation
PD
1
W
Short Circuit Output Current
IOS Address
50
mA
RECOMMENDED OPERATING CONDITIONS (Voltage referenced to Vss, TA= 0 to 70
°C)
*1 : 6.5V at pulse width
≤15ns which is measured at VCC
*2 : -1.3 at pulse width
≤15ns which is measured at VSS
Parameter
Symbol
Min
Typ
Max
Units
Supply Voltage
VCC
3.0
3.3
3.6
V
Ground
VSS
0
0
0
V
Input High Voltage
VIH
2.0
-
+5.5*1
V
Input Low Voltage
VIL
-0.3*2
-
0.8
V
DC AND OPERATING CHARACTERISTICS (Recommended operating conditions unless otherwise noted.)
Parameter
Symbol
Min
Max
Units
Input Leakage Current (Any input 0
≤VIN≤VCC+0.3V,
all other pins not under test=0 Volt)
II(L)
-5
5
uA
Output Leakage Current
(Data out is disabled, 0V
≤VOUT≤VCC)
IO(L)
-5
5
uA
Output High Voltage Level(IOH=-2mA)
VOH
2.4
-
V
Output Low Voltage Level(IOL=2mA)
VOL
-
0.4
V


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