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FS10KMH-03 Datasheet(PDF) 4 Page - Mitsubishi Electric Semiconductor

Part No. FS10KMH-03
Description  HIGH-SPEED SWITCHING USE
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

FS10KMH-03 Datasheet(HTML) 4 Page - Mitsubishi Electric Semiconductor

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Feb.1999
MITSUBISHI Nch POWER MOSFET
FS10KMH-03
HIGH-SPEED SWITCHING USE
0
1.0
2.0
3.0
4.0
5.0
02468
10
VDS = 10V
20V
25V
Tch = 25°C
ID = 10A
0
8
16
24
32
40
0
0.4
0.8
1.2
1.6
2.0
TC = 125°C
75°C
25°C
VGS = 0V
Pulse Test
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
GATE CHARGE Qg (nC)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
SOURCE-DRAIN VOLTAGE VSD (V)
CHANNEL TEMPERATURE Tch (°C)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
PULSE WIDTH tw (s)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
CHANNEL TEMPERATURE Tch (°C)
10–1
100
2
3
4
5
7
101
2
3
4
5
7
–50
0
50
100
150
VGS = 4V
ID = 1/2ID
Pulse Test
0
0.4
0.8
1.2
1.6
2.0
–50
0
50
100
150
VDS = 10V
ID = 1mA
0.4
0.6
0.8
1.0
1.2
1.4
–50
0
50
100
150
VGS = 0V
ID = 1mA
10–1
100
2
3
5
7
101
2
3
5
7
102
2
3
5
7
10–423 57
23 57
23 57
23 57100 23 57101 23 57102
10–3
10–2
10–1
PDM
tw
D
=
T
tw
T
D = 1.0
0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse


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