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2SD1766 Datasheet(PDF) 1 Page - Rohm

Part No. 2SD1766
Description  Medium Power Transistor (32V, 2A)
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Maker  ROHM [Rohm]
Homepage  http://www.rohm.com
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2SD1766 Datasheet(HTML) 1 Page - Rohm

   
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2SD1766 / 2SD1758 / 2SD1862
Transistors
Rev.A
1/3
Medium Power Transistor (32V, 2A)
2SD1766 / 2SD1758 / 2SD1862
Features
1) Low VCE(sat).
VCE(sat) = 0.5V(Typ.)
(IC / IB = 2A / 0.2A)
2) Complements the 2SB1188 / 2SB1182 /
2SB1240.
Structure
Epitaxial planar type
NPN silicon transistor
External dimensions (Unit : mm)
−0.05
+0.1
−0.1
+0.2
+0.2
−0.1
(3)
(2)
(1)
3.0
±0.2
1.5
±0.1
1.5
±0.1
0.4
±0.1
0.5
±0.1
0.4
±0.1
0.4
1.5
4.5
1.6
±0.1
±0.1
−0.1
+0.2
−0.1
+0.2
2.3
±0.2
2.3
±0.2
0.65
±0.1
0.9
0.75
1.0
±0.2
0.55
2.3
0.5
±0.1
6.5
±0.2
5.1
C0.5
(3)
(2)
(1)
6.8
±0.2
2.5
±0.2
1.05
0.45
±0.1
2.54 2.54
0.5
±0.1
(1)
(2)
(3)
0.65Max.
(1) Emitter
(2) Collector
(3) Base
ROHM : ATV
(1) Base
(2) Collector
(3) Emitter
ROHM : CPT3
EIAJ : SC-63
(1) Base
(2) Collector
(3) Emitter
ROHM : MPT3
EIAJ : SC-62
2SD1766
2SD1758
2SD1862
Abbreviated symbol : DB
Denotes hFE
Absolute maximum ratings (Ta=25
°C)
2SD1766
2SD1758
2SD1862
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
Collector
power
dissipation
1 Single pulse, Pw=20ms
2 When mounted on a 40×40×0.7 mm ceramic board.
3 Printed circuit board: 1.7 mm thick, collector copper plating 1 cm2or lager.
Parameter
Symbol
Limits
Unit
VCBO
40
V
VCEO
32
V
VEBO
5V
IC
ICP
2
A (DC)
2.5
A (Pulse)
1
Tj
150
°C
Tstg
−55 to +150
°C
PC
0.5
1
3W
2
2
1
W
10
W (Tc
=25°C)
W


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