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2SC4102 Datasheet(PDF) 1 Page - Rohm

Part No. 2SC4102
Description  High-voltage Amplifier Transistor(120V, 50mA)
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Manufacturer  ROHM [Rohm]
Direct Link  http://www.rohm.com
Logo ROHM - Rohm

2SC4102 Datasheet(HTML) 1 Page - Rohm

  2SC4102 Datasheet HTML 1Page - Rohm  
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2SC4102 / 2SC3906K / 2SC2389S
Transistors
High-voltage Amplifier Transistor
(120V, 50mA)
2SC4102 / 2SC3906K / 2SC2389S
!
!
!
!
Features
1) High breakdown voltage. (BVCEO = 120V)
2) Complements the 2SA1579 / 2SA1514K / 2SA1038S.
!
!
!
!
Absolute maximum ratings (Ta=25
°C)
Parameter
Symbol
2SC4102 / 2SC3906K
2SC2389S
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
120
120
5
50
0.2
0.3
150
−55~+150
Unit
V
V
V
mA
W
°C
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
!
!
!
!
Packaging specifications and hFE
Type
2SC2389S
SPT
RS
TP
5000
2SC3906K
SMT3
RS
T
T146
3000
2SC4102
UMT3
RS
T
T106
3000
Package
hFE
Code
Marking
Basic ordering unit (pieces)
Denotes hFE
!
!
!
!
External dimensions (Units : mm)
ROHM : SMT3
EIAJ : SC-59
JEDEC : SOT-346
2SC3906K
(1) Emitter
(2) Base
(3) Collector
ROHM : UMT3
EIAJ : SC-70
JEDEC : SOT-323
2SC4102
(1) Emitter
(2) Base
(3) Collector
1.25
2.1
0.1Min.
Each lead has same dimensions
0.3Min.
2.8
1.6
ROHM : SPT
EIAJ : SC-72
2SC2389S
(1) Emitter
(2) Collector
(3) Base
Each lead has same dimensions
0.45
2.5
(1) (2) (3)
5
0.45
0.5
42
Taping specifications
!
!
!
!
Electrical characteristics (Ta=25
°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
120
120
5
180
140
2.5
0.5
0.5
0.5
560
V
V
V
µA
µA
V
MHz
pF
IC
=50µA
IC
=1mA
IE
=50µA
VCB
=100V
VEB
=4V
IC/IB
=10mA/1mA
VCE
=6V, IC=2mA
VCE
=12V, IE=−2mA, f=100MHz
VCB
=12V, IE=0A, f=1MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance


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