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Preliminary
Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
3
VREG
2
RF IN
1
VCC1
6
RF OUT
7
GND
5
VCC2
4
RF3117
3V 900MHZ LINEAR AMPLIFIER MODULE
• 3V CDMA/AMPS Cellular Handsets
• 3V CDMA2000/1X Cellular Handsets
• Compatible with Qualcomm Chipset
• Spread-Spectrum Systems
The RF3117 is a high-power, high-efficiency linear ampli-
fier module targeting 3V handheld systems. The device is
manufactured on an advanced Gallium Arsenide Hetero-
junction Bipolar Transistor (HBT) process, and has been
designed for use as the final RF amplifier in dual-mode
3 V CDMA/AMPS handheld digital cellular equipment,
spread-spectrum systems, and other applications in the
824MHz to 849MHz band. The RF3117 has a digital con-
trol line for low power application to reduce the current
drain. The device is self-contained with 50
Ω input and
output that is matched to obtain optimum power, effi-
ciency, and linearity characteristics. The module is an
ultra-small 6mmx6 mm land grid array with backside
ground.
• Input/Output Internally Matched@50
Ω
• Single 3V Supply
• 30dBm Linear Output Power
• 30dB Linear Gain
• 33% Linear Efficiency
• 55mA Idle Current
RF3117
3V 900MHz Linear Amplifier Module
RF3117 PCBA
Fully Assembled Evaluation Board
2
Rev A0 011016
6.0 sq
0.100
3.000
4.390
0.600
0.800 sq
typ
NOTE: Nominal thickness, 1.55 mm.
1.700
0.100
2.500
Dimensions in mm.
Package Style: LGM (6mmx6mm)
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