Preliminary
11-28
RF2514
Rev A2 010215
11
Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage
-0.5 to +3.6
VDC
Power Down Voltage (VPD)
-0.5toVCC
V
Operating Ambient Temperature
-40 to +85
°C
Storage Temperature
-40 to +150
°C
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Overall
T=25°C, VCC=3.0V, Freq=916MHz,
RMODIN=10kΩ
Frequency Range
100
868/915
1000
MHz
Modulation
AM/ASK
Modulation Frequency
4
20
kHz
Square wave, 50% duty cycle, 300kHz loop
bandwidth
Incidental FM
15
kHzP-P
Output Power
1
dBm
50
Ω load, CW
ON/OFF Ratio
52
dB
PLL and Prescaler
Prescaler Divide Ratio
32/64
VCO Gain, KVCO
40
MHz/V
Frequency and board layout dependent
PLL Phase Noise
-90
dBc/Hz
10kHz Offset, 300kHz loop bandwidth
-95
dBc/Hz
100kHz Offset, 300kHz loop bandwidth
Harmonics
-25
dBc
With matched output and no additional filter-
ing.
Reference Frequency
14.318
17
MHz
Crystal Frequency Spurs
-52
dBc
300kHz PLL loop bandwidth
Max Crystal RS
10
50
Ω
For a typ. 2ms turn-on time.
Max Crystal Motional Inductance
10
mH
For a typ. 2ms turn-on time.
Charge Pump Current
100
µA
KPD= 100
µA/2π=0.0159µA/rad
Power Down Control
Power Down (VIL)
0
0.3
V
Voltage supplied to the input; device is “OFF”
Power Down (VIH)VCC-0.3
VCC
V
Voltage supplied to the input; device is “ON”
Control Input Impedance
100
k
Ω
Turn On Time
2
ms
Crystal start-up, 14.318MHz crystal.
Turn Off Time
2
ms
Power Supply
Voltage
2.2
3.0
3.6
V
Specifications
Operating limits
Current Consumption
Average
8
mA
50% Duty Cycle 4kHz Data applied to the
MODINinput. RMODIN (R7+R8)=10kΩ.Out-
put power/DC current consumption exter-
nally adjustable by modulation input resistor
(see applicable Application Schematic).
Sleep Mode
1
µAPD=0
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
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