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SSTUH32865 Datasheet(PDF) 2 Page - NXP Semiconductors |
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SSTUH32865 Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 28 page 9397 750 14136 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 11 March 2005 2 of 28 Philips Semiconductors SSTUH32865 1.8 V high output drive DDR registered buffer with parity s Supports Low Voltage Complementary Metal Oxide Silicon (LVCMOS) switching levels on the control and RESET inputs s Single 1.8 V supply operation s Available in 160-ball 9 mm × 13 mm, 0.65 mm ball pitch TFBGA package 3. Applications s High-density (for example, 2 rank by 4) DDR2 registered DIMMs s DDR2 Registered DIMMs (RDIMM) desiring parity checking functionality s Stacked or planar high-DRAM count registered DIMMs 4. Ordering information Table 1: Ordering information Type number Solder process Package Name Description Version SSTUH32865ET/G Pb-free (SnAgCu solder ball compound) TFBGA160 plastic thin fine-pitch ball grid array package; 160 balls; body 9 × 13 × 0.8 mm SOT802-1 SSTUH32865ET SnPb solder ball compound TFBGA160 plastic thin fine-pitch ball grid array package; 160 balls; body 9 × 13 × 0.8 mm SOT802-1 |
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