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74ALVC162834A_0006 Datasheet(PDF) 2 Page - NXP Semiconductors

Part No. 74ALVC162834A_0006
Description  18-bit registered driver with inverted register enable and 30ohm termination resistors 3-State
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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74ALVC162834A_0006 Datasheet(HTML) 2 Page - NXP Semiconductors

 
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Philips Semiconductors
Product specification
74ALVC162834A
18-bit registered driver with inverted register enable
and 30
Ω termination resistors (3-State)
2
2000 Jun 20
853–2193 23931
FEATURES
Wide supply voltage range of 1.2 V to 3.6 V
Complies with JEDEC standard no. 8-1A.
CMOS low power consumption
Direct interface with TTL levels
Current drive ± 12 mA at 3.0 V
MULTIBYTETM flow-through standard pin-out architecture
Low inductance multiple V
CC and GND pins for minimum noise
and ground bounce
Output drive capability 50 Ω transmission lines @ 85°C
Integrated 30 W termination resistors
Diode clamps to V
CC and GND on all inputs
Input diodes to accommodate strong drivers
DESCRIPTION
The 74ALVC162834A is an 18-bit registered driver. Data flow is
controlled by active low output enable (OE), active low latch enable
(LE) and clock inputs (CP).
When LE is LOW, the A to Y data flow is transparent. When LE is
HIGH and CP is held at LOW or HIGH, the data is latched; on the
LOW to HIGH transient of CP the A-data is stored in the
latch/flip-flop.
The 74ALVC162834A is designed with 30
W_series resistors in both
HIGH or LOW output stages.
When OE is LOW the outputs are active. When OE is HIGH, the
outputs go to the high impedance OFF-state. Operation of the OE
input does not affect the state of the latch/flip -flop.
To ensure the high-impedance state during power up or power
down, OE should be tied to VCC through a pullup resistor; the
minimum value of the resistor is determined by the current-sinking
capability of the driver.
PIN CONFIGURATION
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
NC
NC
Y1
Y2
Y3
Y4
Y5
Y6
GND
VCC
GND
Y7
Y8
Y9
Y10
Y11
Y12
GND
Y13
Y14
Y15
VCC
Y16
Y17
GND
Y18
OE
LE
GND
NC
A1
GND
A2
A3
VCC
A4
A5
A6
GND
A7
A8
A9
A10
A11
A12
GND
A13
A14
A15
VCC
A16
A17
GND
A18
CP
GND
SH00194
QUICK REFERENCE DATA
GND = 0 V; Tamb = 25°C; tr = tf ≤ 2.5 ns
SYMBOL
PARAMETER
CONDITIONS
TYPICAL
UNIT
tPHL/tPLH
Propagation delay
An to Yn;
LE to Yn;
CP to Yn
VCC = 3.3 V, CL = 50 pF
2.9
3.5
3.3
ns
Fmax
Maximum clock frequency
VCC = 3.3 V, CL = 50 pF
240
MHz
CI
Input capacitance
4.0
pF
CI/O
Input/Output capacitance
8.0
pF
C
Power dissipation capacitance per buffer
V = GND to VCC1
transparent mode
Output enabled
Output disabled
10
3
pF
CPD
Power dissipation capacitance per buffer
VI = GND to VCC1
Clocked mode
Output enabled
Output disabled
21
15
pF
NOTES:
1. CPD is used to determine the dynamic power dissipation (PD in µW):
PD = CPD × VCC2 × fi + S (CL × VCC2 × fo) where: fi = input frequency in MHz; CL = output load capacitance in pF;
fo = output frequency in MHz; VCC = supply voltage in V; S (CL × VCC2 × fo) = sum of outputs.


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