2 / 10 page
2-188
RF2157
Rev A19 010611
2
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage (RF off)
+8.0
VDC
Supply Voltage (POUT≤31dBm)
+4.5
VDC
Mode Voltage (VMODE)+3.5
VDC
Control Voltage (VPD)+3.5
VDC
Input RF Power
+12
dBm
Operating Case Temperature
-30 to +110
°C
Storage Temperature
-65 to +150
°C
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Overall
T = 25°C, VCC=3.4 V, VPD=2.8V,
POUT=29dBm, unless otherwise specified
Usable Frequency Range
1750
1910
MHz
Typical Frequency Range
1750-1780
1850-1910
MHz
MHz
Tuned Matching Network
Tuned Matching Network
Linear Gain
23
25
28
dB
POUT=29dBm, VMODE≤ 0.5V
22
24
26
dB
POUT=29dBm, VMODE≥2.5V
Small Signal Gain
22
27
29
dB
PIN≤-20dBm
Second Harmonic (Including
second harmonic trap)
-35
dBc
Third Harmonic
-40
dBc
Fourth Harmonic
-45
dBc
CDMA
VMODE≥2.5V
Linear Output Power
29
dBm
28
dBm
VCC=3.0V
Linear Efficiency
33
37
%
6POUT=16dBm
CDMA ACPR @ 1.25MHz
-46
-44
dBc
Noise Power @ 80MHz Offset
-139
dBm/Hz
CDMA
VMODE≤0.5V
Linear Output Power
29
dBm
Linear Efficiency
30
35
%
CDMA ACPR @ 1.25MHz
-46
-44
dBc
Noise Power @ 80MHz Offset
-139
dBm/Hz
TDMA
Linear Efficiency
30
37
%
TDMA ACPR @ 30kHz Offset
-31
-28
dBc
TDMA ACPR @ 60kHz Offset
-52
-48
dBc
Input VSWR
< 2:1
Output Load VSWR
10:1
No damage.
Stability
5:1
Junction to Case
Thermal Resistance
25
°C/W