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Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
1
2
3
4
5
13
12
11
10
9
GND2
VCC1
RFIN
RF OUT
RF OUT
RF OUT
678
16
14
15
RF2153
CDMA/TDMA/PACS
1900MHZ 3V POWER AMPLIFIER
• PACS Handsets and Base Stations
• 3V 1850-1910MHz CDMA PCS Handsets
• 3V 1750-1780MHz CDMA PCS Handsets
• 3V TDMA PCS Handsets
• Spread-Spectrum Systems
• Commercial and Consumer Systems
The RF2153 is a high-power, high-efficiency linear ampli-
fier IC targeting 3V handheld systems. The device is
manufactured on an advanced Gallium Arsenide Hetero-
junction Bipolar Transistor (HBT) process, and has been
designed for use as the final RF amplifier in 3 V CDMA
and TDMA handheld digital equipment, spread-spectrum
systems, and other applications in the 1750 MHz to
1910 MHz band. The device is packaged in a compact
4 mmx4mm (LCC). The device’s frequency response can
be optimized for linear performance in the 1750MHz to
1910 MHz band.
• Single 3V Supply
• 29dBm Linear Output Power
• 30dB Linear Gain
• 33% Linear Efficiency CDMA
• 40% Linear Efficiency TDMA
• On-board Power Down Mode
RF2153
CDMA/TDMA/PACS 1900MHz 3V Power Amplifier
RF2153 PCBA
Fully Assembled Evaluation Board
2
Rev A18 001114
ALL SOLDER PAD TOLERANCES P0.05mm
1.50 sq.
2.00
0.28
0.13
0.80
0.40
sq.
0.38
1.50
1.20
4.20
3.95
3.50
3.35
4.20
3.95
3.50
3.35
1
Package Style: MP16KO1A
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