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NYC008-6JG Datasheet(PDF) 2 Page - ON Semiconductor |
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NYC008-6JG Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 7 page NYC008−6JG http://onsemi.com 2 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off−State Voltage (Notes 1 and 2) (TJ = *40 to 110°C, Sine Wave, 50 to 60 Hz; RGK = 1 kW) VDRM, VRRM 600 V On-State RMS Current, (TC = 80°C) 180° Conduction Angles IT(RMS) 0.8 A Peak Non-Repetitive Surge Current, (1/2 Cycle, Sine Wave, 60 Hz, TJ = 25°C) ITSM 10 A Circuit Fusing Consideration, (t = 8.3 ms) I2t 0.415 A2s Forward Peak Gate Power, (TA = 25°C, Pulse Width v 1.0 ms) PGM 0.1 W Forward Average Gate Power, (TA = 25°C, t = 8.3 ms) PG(AV) 0.10 W Forward Peak Gate Current, (TA = 25°C, Pulse Width v 1.0 ms) IGM 1.0 A Reverse Peak Gate Voltage, (TA = 25°C, Pulse Width v 1.0 ms) VGRM 5.0 V Operating Junction Temperature Range @ Rate VRRM and VDRM TJ −40 to 110 °C Storage Temperature Range Tstg −40 to 150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. 2. See ordering information for exact device number options. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance,Junction−to−Case Junction−to−Ambient RqJC RqJA 75 200 °C/W Lead Solder Temperature (t1/16″ from case, 10 secs max) TL 260 °C ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current (Note 3) TC = 25°C (VD = Rated VDRM and VRRM; RGK = 1 kW)TC = 110°C IDRM, IRRM − − 10 100 mA ON CHARACTERISTICS Peak Forward On−State Voltage* (ITM = 1.0 A Peak @ TA = 25°C) VTM − 1.7 V Gate Trigger Current (Note 4) TC = 25°C (VAK = 7.0 Vdc, RL = 100 W) IGT − 200 mA Holding Current (Note 3) TC = 25°C (VAK = 7.0 Vdc, Initiating Current = 20 mA, RGK = 1 kW)TC = −40°C IH − − 5.0 10 mA Latch Current (Note 4) TC = 25°C (VAK = 7.0 V, Ig = 200 mA) TC = −40°C IL − − 10 15 mA Gate Trigger Voltage (Note 4) TC = 25°C (VAK = 7.0 Vdc, RL = 100 W)TC = −40°C VGT − − 0.8 1.2 V DYNAMIC CHARACTERISTICS Critical Rate of Rise of Off−State Voltage (VD = Rated VDRM, Exponential Waveform, RGK = 1 kW,TJ = 110°C) dV/dt 50 − V/ms Critical Rate of Rise of On−State Current (IPK = 20 A; Pw = 10 msec; diG/dt = 1 A/msec, Igt = 20 mA) di/dt − 50 A/ms *Indicates Pulse Test: Pulse Width ≤ 1.0 ms, Duty Cycle ≤ 1%. 3. RGK = 1000 W included in measurement. 4. Does not include RGK in measurement. |
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