NTMFS4851N datasheet(4/6 Pages) ONSEMI

Part #	NTMFS4851N

Description	Power MOSFET 30 V, 66 A, Single N?묬hannel, SO??FL

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NTMFS4851N

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TYPICAL CHARACTERISTICS

Figure 3. On−Resistance vs. Gate−to−Source

Voltage

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

VGS, GATE−TO−SOURCE VOLTAGE (V)

ID, DRAIN CURRENT (A)

10

9

8

7

5

4

3

2

0

0.002

0.004

0.006

0.008

0.014

0.018

0.020

55

50

45

35

30

25

20

15

0

0.001

0.002

0.003

0.004

0.005

0.006

0.010

Figure 5. On−Resistance Variation with

Temperature

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

TJ, JUNCTION TEMPERATURE (°C)

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

125

100

75

50

25

0

−25

−50

0.50

0.65

0.95

1.25

1.55

1.70

18

14

12

10

8

6

4

2

10

1000

10,000

Figure 7. Capacitance Variation

Figure 8. Gate−to−Source and

Drain−to−Source Voltage vs. Total Charge

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Qg, TOTAL GATE CHARGE (nC)

25

20

15

10

5

0

500

750

1250

1500

1750

2250

2500

30

25

20

10

5

0

2

4

5

9

10

11

12

611

0.010

ID = 30 A

TJ = 25°C

40

60

TJ = 25°C

VGS = 4.5 V

VGS = 11.5 V

150

ID = 30 A

VGS = 10 V

16

TJ = 150°C

VGS = 0 V

TJ = 125°C

250

TJ = 25°C

Coss

Ciss

Crss

15

8

7

6

3

1

16

14

12

10

8

6

4

2

0

ID = 30 A

TJ = 25°C

QT

VDS

VGS

Qgd

Qgs

0.012

0.016

0.007

0.008

0.009

100

20

1000

2000

1.40

1.10

0.80

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