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NTMFS4851N Datasheet(PDF) 5 Page - ON Semiconductor |
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NTMFS4851N Datasheet(HTML) 5 Page - ON Semiconductor |
5 / 6 page NTMFS4851N http://onsemi.com 5 TYPICAL CHARACTERISTICS Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) 100 10 1 1 10 100 1000 0.9 0.8 0.7 0.6 0.5 0.4 0 2 4 6 12 24 28 Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE(°C) 100 10 1 0.1 0.1 1 10 100 1000 75 150 125 100 50 25 0 20 40 110 Figure 13. gFS vs. Drain Current Figure 14. Avalanche Characteristics DRAIN CURRENT (A) PULSE WIDTH (ms) 90 70 60 50 40 20 10 0 0 20 120 10,000 1000 100 10 1 0.1 1 100 VDS = 15 V ID = 15 A VGS = 11.5 V tf tr td(off) td(on) 8 10 14 16 18 20 26 30 22 VGS = 0 V TJ = 25°C 10 ms 100 ms 1 ms 10 ms dc VGS = 20 V Single Pulse TC = 25°C RDS(on) Limit Thermal Limit Package Limit 70 90 ID = 27 A 30 80 120 40 80 100 60 125°C 100°C 25°C VDS = 1.5 V 10 100 110 10 30 50 100 60 80 |
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