NTMFS4849N

http://onsemi.com

2

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Junction−to−Case (Drain)

2.95

°C/W

Junction−to−Ambient – Steady State (Note 1)

57.6

Junction−to−Ambient – Steady State (Note 2)

143.3

Junction−to−Ambient − t v 10 sec

21.95

1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.

2. Surface−mounted on FR4 board using the minimum recommended pad size.

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

30

V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

25.2

mV/°C

Zero Gate Voltage Drain Current

1

mA

10

Gate−to−Source Leakage Current

±100

nA

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

1.45

1.9

2.5

V

Negative Threshold Temperature Coefficient

5.0

mV/°C

Drain−to−Source On Resistance

11.5 V

3.9

5.1

mW

3.9

6.2

7.9

6.1

Forward Transconductance

62

S

CHARGES AND CAPACITANCES

Input Capacitance

2040

pF

Output Capacitance

361

Reverse Transfer Capacitance

181

Total Gate Charge

15

22

nC

Threshold Gate Charge

2.2

Gate−to−Source Charge

5.7

Gate−to−Drain Charge

5.1

Total Gate Charge

34.6

nC

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time

15.6

ns

Rise Time

45.1

Turn−Off Delay Time

18.2

Fall Time

5.7

3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

4. Switching characteristics are independent of operating junction temperatures.