NTMFS4708N datasheet(2/5 Pages) ONSEMI

Part #	NTMFS4708N

Description	Power MOSFET 30 V, 19 A, Single N-Channel, SOIC-8 FL

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Manufacturer	ONSEMI [ON Semiconductor]

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NTMFS4708N

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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain-to-Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = 250 mA

30

V

Drain-to-Source Breakdown Voltage

Temperature Coefficient

V(BR)DSS/TJ

10

mV/

°C

Zero Gate Voltage Drain Current

IDSS

VGS = 0 V, VDS = 24 V

TJ = 25°C

1.0

mA

TJ = 125°C

50

Gate-to-Source Leakage Current

IGSS

VDS = 0 V, VGS = ±20V

±100

nA

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250 mA

1.0

2.5

V

Negative Threshold

Temperature Coefficient

VGS(TH)/TJ

5.0

mV/

°C

Drain-to-Source On Resistance

RDS(on)

VGS = 10 V, ID = 11.5 A

7.3

10

m

W

VGS = 4.5 V, ID = 9.5 A

10.1

14

Forward Transconductance

gFS

VDS = 15 V, ID = 11.5 A

23

S

CHARGES, CAPACITANCES AND GATE RESISTANCE

Input Capacitance

CISS

VGS = 0 V, f = 1.0 MHz, VDS = 24 V

970

pF

Output Capacitance

COSS

440

Reverse Transfer Capacitance

CRSS

115

Total Gate Charge

QG(TOT)

VGS = 4.5 V, VDS = 15 V; ID = 11.5 A

10

15

nC

Threshold Gate Charge

QG(TH)

1.3

Gate-to-Source Charge

QGS

2.6

Gate-to-Drain Charge

QGD

4.8

Gate Resistance

RG

1.95

W

SWITCHING CHARACTERISTICS (Note 4)

Turn-On Delay Time

td(on)

VGS = 10 V, VDD = 15 V, ID = 1.0 A,

RG = 3.0 W

6.7

ns

Rise Time

tr

4.3

Turn-Off Delay Time

td(off)

20

Fall Time

tf

16

DRAIN-SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

VSD

VGS = 0 V, IS = 6.25 A

TJ = 25°C

0.78

1.0

V

TJ = 125°C

0.60

Reverse Recovery Time

tRR

VGS = 0 V, dIS/dt = 100 A/ms,

IS = 6.25 A

32

ns

Charge Time

ta

15.5

Discharge Time

tb

16.5

Reverse Recovery Charge

QRR

24

nC

3. Pulse Test: pulse width

≤ 300 ms, duty cycle ≤ 2%.

4. Switching characteristics are independent of operating junction temperatures.

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