NTLTD7900ZR2G datasheet(5/8 Pages) ONSEMI

Part #	NTLTD7900ZR2G

Description	Power MOSFET 9 A, 20 V, Logic Level, N-Channel Micro8??Leadless

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NTLTD7900ZR2

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5

10,000

1000

100

2

0

812

14

6

4

2

0

Qg, TOTAL GATE CHARGE (nC)

Figure 7. Gate−to−Source

RG, GATE RESISTANCE (W)

Figure 8. Resistive Switching Time Variation

versus Gate Resistance

4

3

5

1

10

100

10

1

TJ = 25°C

ID = 6.5 A

VDS = 10 V

ID = 6.5 A

VGS = 4.5 V

tr

td(off)

td(on)

tf

VSD, SOURCE−TO−DRAIN VOLTAGE (V)

0.1

0

Figure 9. Diode Forward Voltage versus Current

0.4

0.6

0.8

1

10

0.2

TJ = 25°C

VGS = 0 V

TJ = 150°C

TJ = 25°C

Figure 10. On−Resistance Variation with

Temperature

1.8

0.6

−50

0

25

50

150

−0.8

1.0

1.4

1.6

TJ, JUNCTION TEMPERATURE (°C)

−25

125

75

100

1.2

ID = 9 A

VGS = 4.5 V

0.2

−0.4

−50

0

25

50

150

−0.3

−0.2

0

0.1

TJ, JUNCTION TEMPERATURE (°C)

Figure 11. Threshold Voltage

−25

125

75

100

−0.1

ID = 250 mA

30

0

0.040

ID, DRAIN CURRENT (A)

Figure 12. On−Resistance versus Drain

Current and Temperature

0.015

0.005

510

15

0.020

0.035

20

25

0.010

0.025

0.030

TJ = 125°C

TJ = 25°C

TJ = −55°C

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NTLTD7900ZR2G Datasheet(PDF) 5 Page - ON Semiconductor

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