NTLJS3180PZTBG datasheet(2/6 Pages) ONSEMI

Part #	NTLJS3180PZTBG

Description	Power MOSFET

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Manufacturer	ONSEMI [ON Semiconductor]

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NTLJS3180PZ

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THERMAL RESISTANCE RATINGS

Parameter

Symbol

Max

Unit

Junction−to−Ambient – Steady State (Note 3)

RqJA

65

°C/W

Junction−to−Ambient – Steady State Min Pad (Note 4)

RqJA

180

Junction−to−Ambient – t ≤ 5 s (Note 3)

RqJA

38

3. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).

4. Surface Mounted on FR4 Board using the minimum recommended pad size (30 mm2, 2 oz Cu).

MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = −250 mA

−20

V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

V(BR)DSS/TJ

ID = −250 mA, Ref to 25°C

−5.0

mV/°C

Zero Gate Voltage Drain Current

IDSS

VDS = −16 V, VGS = 0 V

TJ = 25°C

−1.0

mA

TJ = 85°C

−10

Gate−to−Source Leakage Current

IGSS

VDS = 0 V, VGS = ±8.0 V

±10

mA

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = −250 mA

−0.45

−1.0

V

Gate Threshold Temperature Coeffi-

cient

VGS(TH)/TJ

3.0

mV/°C

Drain−to−Source On−Resistance

RDS(on)

VGS = −4.5 V, ID = −3.0 A

30

38

mW

VGS = −2.5 V, ID = −3.0 A

40

50

VGS = −1.8 V, ID = −2.0 A

55

75

VGS = −1.5 V, ID = −1.8 A

85

200

Forward Transconductance

gFS

VDS = −16 V, ID = −3.0 A

7.7

S

CHARGES, CAPACITANCES AND GATE RESISTANCE

Input Capacitance

CISS

VGS = 0 V, f = 1.0 MHz,

VDS = −16 V

1100

pF

Output Capacitance

COSS

180

Reverse Transfer Capacitance

CRSS

130

Total Gate Charge

QG(TOT)

VGS = −4.5 V, VDS = −16 V,

ID = −3.0 A

13

19.5

nC

Threshold Gate Charge

QG(TH)

0.5

Gate−to−Source Charge

QGS

1.4

Gate−to−Drain Charge

QGD

4.2

SWITCHING CHARACTERISTICS (Note 6)

Turn−On Delay Time

td(ON)

VGS = −4.5 V, VDD = −10 V,

ID = −3.0 A, RG = 3.0 W

8.0

ns

Rise Time

tr

15

Turn−Off Delay Time

td(OFF)

70

Fall Time

tf

67

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Recovery Voltage

VSD

VGS = 0 V, IS = −2.0 A

TJ = 25°C

−0.7

−1.0

V

TJ = 125°C

−0.6

Reverse Recovery Time

tRR

VGS = 0 V, dISD/dt = 100 A/ms,

IS = −2.0 A

60

ns

Charge Time

ta

16

Discharge Time

tb

44

Reverse Recovery Time

QRR

41

nC

5. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.

6. Switching characteristics are independent of operating junction temperatures.

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