NTLJS2103PTBG datasheet(4/6 Pages) ONSEMI

Part #	NTLJS2103PTBG

Description	Power MOSFET

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NTLJS2103P

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4

TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)

Figure 7. Capacitance Variation

Figure 8. Gate−to−Source and

Drain−to−Source Voltage vs. Total Charge

Figure 9. Resistive Switching Time

Variation versus Gate Resistance

Figure 10. Diode Forward Voltage vs. Current

SINGLE PULSE TIME (s)

QG, TOTAL GATE CHARGE (nC)

VDS = −9.6 V

ID = −5.9 A

TJ = 25°C

-VGS

QGS

QGD

QT

-VDS

−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

VGS = 0 V

TJ = 25°C

TJ = 150°C

Figure 11. Threshold Voltage

TJ, JUNCTION TEMPERATURE (°C)

ID = −250 mA

Figure 12. Single Pulse Maximum Power

Dissipation

−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

VGS = 0 V

TJ = 25°C

f = 1 MHz

Coss

Ciss

Crss

RG, GATE RESISTANCE (OHMS)

tr

td(off)

td(on)

tf

VGS = −4.5 V

VDD = −8.0 V

ID = −5.9 A

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