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NTLJD2104PTAG Datasheet(PDF) 3 Page - ON Semiconductor |
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NTLJD2104PTAG Datasheet(HTML) 3 Page - ON Semiconductor |
3 / 7 page NTLJD2104P http://onsemi.com 3 MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Unit Max Typ Min Test Conditions Symbol SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time td(ON) VGS = −4.5 V, VDD = −6.0 V, ID = −3.0 A, RG = 2.0 W 6.6 ns Rise Time tr 12.3 Turn−Off Delay Time td(OFF) 14 Fall Time tf 16.2 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Recovery Voltage VSD VGS = 0 V, IS = −1.0 A TJ = 25°C −0.7 −1.0 V TJ = 85°C −0.65 Reverse Recovery Time tRR VGS = 0 V, dISD/dt = 100 A/ms, IS = −1.0 A 23 45 ns Charge Time ta 8.0 Discharge Time tb 15 Reverse Recovery Time QRR 10 20 nC 5. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. ORDERING INFORMATION Device Package Shipping† NTLJD2104PTBG WDFN6 (Pb−Free) 3000 / Tape & Reel NTLJD2104PTAG WDFN6 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. |
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