NTLJD2104PTAG datasheet(3/7 Pages) ONSEMI

Part #	NTLJD2104PTAG

Description	Power MOSFET

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Manufacturer	ONSEMI [ON Semiconductor]

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NTLJD2104P

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MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Parameter

Unit

Max

Typ

Min

Test Conditions

Symbol

SWITCHING CHARACTERISTICS (Note 6)

Turn−On Delay Time

td(ON)

VGS = −4.5 V, VDD = −6.0 V,

ID = −3.0 A, RG = 2.0 W

6.6

ns

Rise Time

tr

12.3

Turn−Off Delay Time

td(OFF)

14

Fall Time

tf

16.2

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Recovery Voltage

VSD

VGS = 0 V, IS = −1.0 A

TJ = 25°C

−0.7

−1.0

V

TJ = 85°C

−0.65

Reverse Recovery Time

tRR

VGS = 0 V, dISD/dt = 100 A/ms,

IS = −1.0 A

23

45

ns

Charge Time

ta

8.0

Discharge Time

tb

15

Reverse Recovery Time

QRR

10

20

nC

5. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.

6. Switching characteristics are independent of operating junction temperatures.

ORDERING INFORMATION

Device

Package

Shipping†

NTLJD2104PTBG

WDFN6

(Pb−Free)

3000 / Tape & Reel

NTLJD2104PTAG

WDFN6

(Pb−Free)

3000 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

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