NTLGF3402P

http://onsemi.com

2

Parameter

Symbol

Max

Unit

Peak Repetitive Reverse Voltage

20

V

DC Blocking Voltage

20

V

Average Rectified Forward Current

2.0

A

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Max

Unit

Junction−to−Ambient – Steady State (Note 2)

110

°C/W

Junction−to−Ambient – t

≤ 10 s (Note 2)

58

°C/W

Junction−to−Ambient – Steady State (Note 3)

79

°C/W

Junction−to−Ambient – t

≤ 10 s (Note 3)

41

°C/W

3. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

−20

V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

−9.0

mV/

°C

Zero Gate Voltage Drain Current

−1.0

mA

−5.0

Gate−to−Source Leakage Current

±100

nA

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage

−0.6

−2.0

V

Gate Threshold

Temperature Coefficient

2.7

mV/

°C

Drain−to−Source On−Resistance

110

140

m

W

190

225

Forward Transconductance

4.8

S

CHARGES AND CAPACITANCES

Input Capacitance

230

350

pF

Output Capacitance

105

225

Reverse Transfer Capacitance

40

75

Total Gate Charge

3.8

10

nC

Threshold Gate Charge

0.32

Gate−to−Source Charge

0.7

Gate−to−Drain Charge

1.6

SWITCHING CHARACTERISTICS (Note 5)

Turn−On Delay Time

6.2

15

ns

Rise Time

22

30

Turn−Off Delay Time

25

45

Fall Time

34

60

4. Pulse Test: Pulse Width

v 300 ms, Duty Cycle v 2%.

5. Switching characteristics are independent of operating junction temperatures.