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NTLGF3402P Datasheet(PDF) 2 Page - ON Semiconductor |
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NTLGF3402P Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 8 page NTLGF3402P http://onsemi.com 2 SCHOTTKY DIODE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Max Unit Peak Repetitive Reverse Voltage VRRM 20 V DC Blocking Voltage VR 20 V Average Rectified Forward Current IF 2.0 A THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit Junction−to−Ambient – Steady State (Note 2) RqJA 110 °C/W Junction−to−Ambient – t ≤ 10 s (Note 2) RqJA 58 °C/W Junction−to−Ambient – Steady State (Note 3) RqJA 79 °C/W Junction−to−Ambient – t ≤ 10 s (Note 3) RqJA 41 °C/W 3. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = −250 mA −20 V Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ −9.0 mV/ °C Zero Gate Voltage Drain Current IDSS VDS = −16 V, VGS = 0 V TJ = 25°C −1.0 mA TJ = 125°C −5.0 Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±12 V ±100 nA ON CHARACTERISTICS (Note 4) Gate Threshold Voltage VGS(TH) VGS = VDS, ID = −250 mA −0.6 −2.0 V Gate Threshold Temperature Coefficient VGS(TH)/TJ 2.7 mV/ °C Drain−to−Source On−Resistance RDS(on) VGS = −4.5, ID = −2.7 A 110 140 m W VGS = −2.5, ID = −1.0 A 190 225 Forward Transconductance gFS VDS = −10 V, ID = −2.7 A 4.8 S CHARGES AND CAPACITANCES Input Capacitance CISS VGS = 0 V, f = 1.0 MHz, VDS = −10 V 230 350 pF Output Capacitance COSS 105 225 Reverse Transfer Capacitance CRSS 40 75 Total Gate Charge QG(TOT) VGS = −4.5 V, VDS = −10 V, ID = −2.7 A 3.8 10 nC Threshold Gate Charge QG(TH) 0.32 Gate−to−Source Charge QGS 0.7 Gate−to−Drain Charge QGD 1.6 SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time td(ON) VGS = −4.5 V, VDD = −16 V, ID = −2.7 A, RG = 2.4 W 6.2 15 ns Rise Time tr 22 30 Turn−Off Delay Time td(OFF) 25 45 Fall Time tf 34 60 4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 5. Switching characteristics are independent of operating junction temperatures. |
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