NTHD3100CT1G datasheet(5/8 Pages) ONSEMI

Part #	NTHD3100CT1G

Description	Power MOSFET 20 V, 3.9 A /??.4 A, Complementary ChipFET

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NTHD3100C

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5

TYPICAL N−CHANNEL PERFORMANCE CURVES

(TJ = 25°C unless otherwise noted)

VDS = 0 V

VGS = 0 V

5

10

400

300

200

100

0

20

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 7. Capacitance Variation

Figure 8. Gate−to−Source and

Drain−to−Source Voltage vs. Total Charge

Qg, TOTAL GATE CHARGE (nC)

TJ = 25°C

COSS

CISS

CRSS

10

1

10

1

100

RG, GATE RESISTANCE (OHMS)

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

VDS = 10 V

ID = 2.9 A

VGS = 4.5 V

100

50

td(off)

td(on)

tf

tr

VGS VDS

15

0.9

3

0

VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

Figure 10. Diode Forward Voltage vs. Current

VGS = 0 V

TJ = 25°C

0.7

0.4

0.3

1

4

2

1.0

0.6

5

0

1

2

3

4

5

0

0.5

1

1.5

2

2.5

3

0

3

6

9

12

15

ID = 2.9 A

TJ = 25°C

QG

QGD

QGS

VDS

VGS

0.5

0.8

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