NTHD3100C datasheet(6/8 Pages) ONSEMI

Part #	NTHD3100C

Description	Power MOSFET 20 V, 3.9 A /??.4 A, Complementary ChipFET

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NTHD3100C

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TYPICAL P−CHANNEL PERFORMANCE CURVES

(TJ = 25°C unless otherwise noted)

−2 V

100°C

0

4

5

3

6

3

2

−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

2

1

0

1

Figure 11. On−Region Characteristics

0.5

4

2

1.5

2.5

3

2

1

0

3

Figure 12. Transfer Characteristics

−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

0.1

35

0.2

0.05

Figure 13. On−Resistance vs. Gate−to−Source

Voltage

−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 14. On−Resistance vs. Drain Current

and Gate Voltage

−ID, DRAIN CURRENT (AMPS)

−50

0

−25

25

1.3

1.2

1

0.8

0.7

50

125

100

Figure 15. On−Resistance Variation with

Temperature

−TJ, JUNCTION TEMPERATURE (°C)

TJ = 25°C

24

TC = −55°C

ID = −3.2 A

TJ = 25°C

75

150

ID = −3.2 A

VGS = −4.5 V

4

25°C

1.4

−2.2 V

16

24

8

10

20

16

Figure 16. Drain−to−Source Leakage Current

vs. Voltage

−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

12

VGS = 0 V

TJ = 100°C

−1.4 V

−1.6 V

−1.8 V

100

1000

78

−2.6 V

VDS ≥ −10 V

610

18

14

VGS = −3 V

VGS = −5 V to −3.6 V

23

4

5

TJ = 25°C

VGS = −4.5 V

VGS = −2.5 V

0.15

67

8

1.1

0.9

5

6

7

8

9

910

−2.4 V

9

8

7

6

5

0

3.5

0.125

0.075

0.175

0.1

0.2

0.05

0.15

0.125

0.075

0.175

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