NTGS3441B datasheet(4/6 Pages) ONSEMI

Part #	NTGS3441B

Description	Power MOSFET -20 V, -3.5 A, Single P-Channel, TSOP-6

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NTGS3441B

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TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)

Figure 7. Gate-to-Source and

Drain-to-Source Voltage vs. Total Charge

Figure 8. Diode Forward Voltage vs. Current

Figure 9. Threshold Voltage

0.001

60

1

100

40

30

20

10

0.1

0

1000

Figure 10. Single Pulse Maximum Power

Dissipation

SINGLE PULSE TIME (s)

0

3

0

QG, TOTAL GATE CHARGE (nC)

7

4

6

VDS = -10 V

ID = -3 A

TJ = 25°C

-VGS

QGS

QGD

QT

2

1

6

0

12

2

-VDS

10

4

2

1.0

0.0

-VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

VGS = 0 V

0.8

0.4

10

1.4

20

TJ = 25°C

TJ = 150°C

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

0.01

0.1

1

10

100

0.1

1

10

100

VGS = -8.0 V

SINGLE PULSE

TC = 25°C

RDS(on) LIMIT

Thermal Limit

Package Limit

100

ms

1 ms

10 ms

dc

-VDS, DRAIN-TO-SOURCE VOLTAGE (V)

8

4

0.2

0.6

1.0

-50

0

-25

25

0.7

0.5

0.3

0.0

50

125

100

TJ, JUNCTION TEMPERATURE (°C)

75

150

ID = -250 mA

0.9

0.6

0.4

10

0.01

50

5

6

1.2

0.8

0.2

0.1

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