NTGD4169F datasheet(6/7 Pages) ONSEMI

Part #	NTGD4169F

Description	Power MOSFET and Schottky Diode 30 V, 2.9 A, N?묬hannel with Schottky Barrier Diode, TSOP??

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NTGD4169F

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6

0.01

0.1

1

0.0001

0.001

0.01

0.1

1

10

100

1000

Duty Cycle = 0.5

t, TIME (s)

Figure 12. FET Thermal Response

0.2

0.1

0.05

0.02

0.01

Single Pulse

TYPICAL CHARACTERISTICS SCHOTTKY

0.1

1

10

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

VF, INSTANTANEOUS FORWARD VOLTAGE (V)

TJ = 125°C

Figure 13. Typical Forward Voltage

−55°C

25°C

85°C

100E−9

1E−6

10E−6

100E−6

1E−3

10E−3

100E−3

010

20

30

VR, REVERSE VOLTAGE (V)

Figure 14. Typical Reverse Current

TJ = 125°C

TJ = 85°C

TJ = 25°C

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