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EP3SE80 Datasheet(PDF) 15 Page - Altera Corporation

Part No. EP3SE80
Description  Stratix III Device Handbook, Volume 2
Download  341 Pages
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Maker  ALTERA [Altera Corporation]
Homepage  http://www.altera.com
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EP3SE80 Datasheet(HTML) 15 Page - Altera Corporation

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Chapter 1: Stratix III Device Datasheet: DC and Switching Characteristics
1–5
Electrical Characteristics
© July 2010
Altera Corporation
Stratix III Device Handbook, Volume 2
DC Characteristics
This section lists the input pin capacitances, on-chip termination tolerance, and
hot- socketing specifications.
Supply Current
Standby current is the current the device draws after the device is configured with no
inputs/outputs toggling and no activity in the device. Because these currents vary
largely with the resources used, use the Excel-based Early Power Estimator (EPE) to
get supply current estimates for your design.
Table 1–4 lists supply current specifications for VCC_CLKIN and VCCPGM. Use the EPE to get
supply current estimates for the remaining power supplies.
I/O Pin Leakage Current
Table 1–5 lists Stratix III I/O pin leakage current specifications.
Bus Hold Specifications
Table 1–6 lists the Stratix III device family bus hold specifications.
Table 1–4. Supply Current Specifications for VCC_CLKIN and VCCPGM
Symbol
Parameter
Min
Max
Unit
I
CLKIN
V
CC_CLKIN current specifications
0
250
mA
I
PGM
V
CCPGM current specifications
0
250
mA
Table 1–5. I/O Pin Leakage Current for Stratix III Devices (Note 1), (2)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
I
I
Input Pin Leakage Current
V
I = VCCIOMAX to 0 V
-10
10
A
I
OZ
Tri-stated I/O Pin Leakage
Current
V
O = VCCIOMAX to 0 V
-10
10
A
Notes to Table 1–5:
(1) This value is specified for normal device operation. The value may vary during power-up. This applies for all V
CCIO
settings (3.3, 3.0, 2.5, 1.8, 1.5, and 1.2 V).
(2) The 10-
A I/O leakage current limit is applicable when the internal clamping diode is off. A higher current can be
observed when the diode is on.
Table 1–6. Bus Hold Parameters for Stratix III Devices (Part 1 of 2)
Parameter
Symbol
Conditions
V
CCIO
Unit
1.2 V
1.5 V
1.8 V
2.5 V
3.0 V/3.3 V
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Low sustaining
current
ISUSL
V
IN >VIL
(maximum)
22.5
25.0
30.0
50.0
70.0
µA
High sustaining
current
ISUSH
VIN <VIH
(minimum)
-22.5
-25.0
-30.0
-50.0
-70.0
µA
Low overdrive
current
IODL
0V < V
IN <VCCIO
—120
—160
—200
—300
—500
µA


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