NTD4810N-1G datasheet(4/8 Pages) ONSEMI

Part #	NTD4810N-1G

Description	Power MOSFET 30 V, 54 A, Single N--Channel, DPAK/IPAK

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NTD4810N

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TYPICAL PERFORMANCE CURVES

4V

10 V

10

0.020

30

0.005

0

1.5

1.0

0

10,000

100,000

05

30

2

1

VDS, DRAIN--TO--SOURCE VOLTAGE (VOLTS)

0

VGS, GATE--TO--SOURCE VOLTAGE (VOLTS)

Figure 1. On--Region Characteristics

Figure 2. Transfer Characteristics

3

0.048

4

0.023

0.013

0.003

5

Figure 3. On--Resistance vs. Gate--to--Source

Voltage

VGS, GATE--TO--SOURCE VOLTAGE (VOLTS)

Figure 4. On--Resistance vs. Drain Current and

Gate Voltage

ID, DRAIN CURRENT (AMPS)

Figure 5. On--Resistance Variation with

Temperature

TJ, JUNCTION TEMPERATURE (°C)

Figure 6. Drain--to--Source Leakage Current

vs. Drain Voltage

VDS, DRAIN--TO--SOURCE VOLTAGE (VOLTS)

--50

50

25

0

--25

75

125

100

23

15

10

25

5

3

VDS ≥ 10 V

TJ =25°C

TJ =--55°C

TJ = 125°C

VGS =4.5 V

175

VGS =0 V

ID =30 A

VGS =10 V

50

TJ = 175°C

TJ = 125°C

40

0

45

TJ =25°C

20

10

5V

3V

6V

2.0

1000

4

1

0

610

0.033

40

0.010

50

4.5 V

3.4 V

3.6 V

3.8 V

40

10

20

60

30

20

60

10

50

ID =30 A

TJ =25°C

78

9

0.008

0.018

0.028

0.043

0.038

25

35

45

55

VGS =11.5 V

150

100

3.2 V

TJ =25°C

0.015

15

20

2.8 V

0.5

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