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NTD4806NT4G Datasheet(PDF) 5 Page - ON Semiconductor

Part # NTD4806NT4G
Description  Power MOSFET 30 V, 76 A, Single N--Channel, DPAK/IPAK
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NTD4806NT4G Datasheet(HTML) 5 Page - ON Semiconductor

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NTD4806N
http://onsemi.com
5
TYPICAL PERFORMANCE CURVES
Crss
10
0
10
15
25
GATE--TO--SOURCE OR DRAIN--TO--SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
1000
0
VGS
VDS
2000
55
VGS =0 V
VDS =0 V
TJ =25°C
Ciss
Coss
Crss
Ciss
3000
4000
VGS
Figure 8. Gate--To--Source and Drain--To--Source
Voltage vs. Total Charge
0
2
0
QG, TOTAL GATE CHARGE (nC)
8
4
10
5
ID =30 A
VGS =4.5 V
TJ =25°C
Q2
Q1
QT
20
15
0
0.5
VSD, SOURCE--TO--DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
RG, GATE RESISTANCE (OHMS)
1
10
100
1000
1
VGS =0 V
Figure 10. Diode Forward Voltage vs. Current
100
0.6
0.7
1.0
5
10
15
tr
td(off)
td(on)
tf
10
VDD =15 V
ID =30 A
VGS =11.5 V
0.8
0.9
20
30
25
TJ =25°C
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
0.1
1
100
VDS, DRAIN--TO--SOURCE VOLTAGE (VOLTS)
0.1
1000
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10
10
VGS =20 V
SINGLE PULSE
TC =25°C
1ms
100 ms
10 ms
dc
10 ms
20
6
1
100
0
25
TJ, JUNCTION TEMPERATURE (°C)
ID =21 A
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
50
75
175
50
100
150
100
125
200
250
150


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