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NTD4804N Datasheet(PDF) 3 Page - ON Semiconductor |
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NTD4804N Datasheet(HTML) 3 Page - ON Semiconductor |
3 / 8 page NTD4804N http://onsemi.com 3 ELECTRICAL CHARACTERISTICS (TJ =25°C unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit DRAIN--SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS =0 V, IS =30 A TJ =25°C 0.81 1.2 V TJ = 125°C 0.72 Reverse Recovery Time tRR VGS = 0 V, dIs/dt = 100 A/ms, IS =30 A 34 ns Charge Time ta 19 Discharge Time tb 15 Reverse Recovery Time QRR 30 nC PACKAGE PARASITIC VALUES Source Inductance LS TA =25°C 2.49 nH Drain Inductance, DPAK LD 0.0164 Drain Inductance, IPAK LD 1.88 Gate Inductance LG 3.46 Gate Resistance RG 0.6 Ω |
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