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NTE4151PT1G Datasheet(PDF) 3 Page - ON Semiconductor

Part No. NTE4151PT1G
Description  Small Signal MOSFET −20 V, −760 mA, Single P−Channel, Gate Zener, SC−75, SC−89
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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NTE4151PT1G Datasheet(HTML) 3 Page - ON Semiconductor

   
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NTA4151P, NTE4151P
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
0
50
100
150
200
250
04
8
12
16
20
0
0.1
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0.6
0
0.1
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0.5
0.6
0.7
−ID, DRAIN CURRENT (AMPS)
TJ = 125°C
VGS = −2.5 V
TJ = −55°C
TJ = 25°C
0.6
0.8
1.0
1.2
1.4
1.6
−50
−25
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150
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Figure 1. On−Region Characteristics
−1.0 V
−1.25 V
−1.5 V
VGS = −1.75 V to −4.5 V
TJ = 25°C
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
TJ = −55°C
TJ = 25°C
VDS w −10 V
TJ = 125°C
Figure 3. On−Resistance vs. Drain Current and
Temperature
−ID, DRAIN CURRENT (AMPS)
TJ = 125°C
VGS = −4.5 V
TJ = −55°C
TJ = 25°C
Figure 4. On−Resistance vs. Drain Current and
Temperature
Figure 5. On−Resistance Variation with
Temperature
TJ, JUNCTION TEMPERATURE (°C)
ID = − 0.35 A
VGS = −4.5 V
Figure 6. Capacitance Variation
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
TJ = 25°C
CISS
COSS
CRSS


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