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NTE4151PT1G Datasheet(PDF) 1 Page - ON Semiconductor

Part No. NTE4151PT1G
Description  Small Signal MOSFET −20 V, −760 mA, Single P−Channel, Gate Zener, SC−75, SC−89
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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NTE4151PT1G Datasheet(HTML) 1 Page - ON Semiconductor

   
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© Semiconductor Components Industries, LLC, 2006
September, 2006 − Rev. 5
1
Publication Order Number:
NTA4151P/D
NTA4151P, NTE4151P
Small Signal MOSFET
−20 V, −760 mA, Single P−Channel,
Gate Zener, SC−75, SC−89
Features
Low RDS(on) for Higher Efficiency and Longer Battery Life
Small Outline Package (1.6 x 1.6 mm)
SC−75 Standard Gullwing Package
ESD Protected Gate
Pb−Free Packages are Available
Applications
High Side Load Switch
DC−DC Conversion
Small Drive Circuits
Battery Operated Systems such as Cell Phones, PDAs, Digital
Cameras, etc.
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Value
Units
Drain−to−Source Voltage
VDSS
−20
V
Gate−to−Source Voltage
VGS
±6.0
V
Continuous Drain Current
(Note 1)
Steady State
ID
−760
mA
Power Dissipation (Note 1)
SC−75
SC−89
Steady State
PD
301
313
mW
Pulsed Drain Current
tp =10
ms
IDM
±1000
mA
Operating Junction and Storage Temperature
TJ,
TSTG
−55 to
150
°C
Continuous Source Current (Body Diode)
IS
−250
mA
Lead Temperature for Soldering Purposes
(1/8 in from case for 10 s)
TL
260
°C
Gate−to−Source ESD Rating −
(Human Body Model, Method 3015)
ESD
1800
V
THERMAL RESISTANCE RATINGS
Junction−to−Ambient − Steady State (Note 1)
SC−75
SC−89
RqJA
415
400
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
MARKING DIAGRAM
& PIN ASSIGNMENT
http://onsemi.com
xx
= Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
RDS(on) TYP
ID MAX
V(BR)DSS
0.26
W @ −4.5 V
−20 V
0.35
W @ −2.5 V
−760 mA
0.49
W @ −1.8 V
P−Channel MOSFET
G
D
S
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
SC−75 / SOT−416
CASE 463
STYLE 5
2
1
3
3
Drain
2
Source
SC−89
CASE 463C
2
1
3
xx M
G
G
1
Gate


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