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EDB101S Datasheet(PDF) 2 Page - Rectron Semiconductor |
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EDB101S Datasheet(HTML) 2 Page - Rectron Semiconductor |
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RECTRON RATING AND CHARACTERISTIC CURVES ( EDB101S THRU EDB106S ) FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC 50 NONINDUCTIVE 10 NONINDUCTIVE D.U.T 25 Vdc (approx) ( - ) ( - ) ( + ) ( + ) 1 NON- INDUCTIVE OSCILLOSCOPE (NOTE 1) PULSE GENERATOR (NOTE 2) NOTES:1 Rise Time = 7ns max. Input Impedance = 1 megohm. 22 pF. 2. Rise Time = 10ns max. Source Impedance = 50 ohms. trr +0.5A 0 -0.25A -1.0A 1cm SET TIME BASE FOR 10 ns/cm FIG. 2 - TYPICAL FORWARD CURRENT DERATING CURVE AMBIENT TEMPERATURE ( ) 2.0 1.0 0 25 50 75 100 125 150 175 0 Single Phase Half Wave 60Hz Resistive or Inductive Load FIG. 3 - TYPICAL REVERSE CHARACTERISTICS PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) TJ = 25 TJ = 100 TJ = 150 100 10 1.0 .1 .01 40 0 20 60 80 100 120 140 INSTANTANEOUS FORWARD VOLTAGE, (V) 0 .2 .4 .6 .8 1.0 1.2 1.4 .001 .01 .1 1.0 10 FIG. 4 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS Pulse Width = 300uS 1% Duty Cycle TJ = 25 FIG. 6 - TYPICAL JUNCTION CAPACITANCE REVERSE VOLTAGE, ( V ) 200 100 60 40 20 10 6 4 2 1 .1 .2 .4 1.0 2 4 10 20 40 100 TJ = 25 FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT NUMBER OF CYCLES AT 60Hz 35 30 25 20 15 10 5 0 1 2 5 10 20 50 100 8.3ms Single Half Sine-Wave (JEDED Method) |
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