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EDB101S Datasheet(PDF) 2 Page - Rectron Semiconductor

Part No. EDB101S
Description  GLASS PASSIVATED SUPER FAST SILICON SURFACE MOUNT BRIDGE RECTIFIER (VOLTAGE RANGE 50 to 400 Volts CURRENT 1.0 Ampere)
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Maker  RECTRON [Rectron Semiconductor]
Homepage  http://www.rectron.com
Logo RECTRON - Rectron Semiconductor

EDB101S Datasheet(HTML) 2 Page - Rectron Semiconductor

  EDB101S Datasheet HTML 1Page - Rectron Semiconductor EDB101S Datasheet HTML 2Page - Rectron Semiconductor  
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RECTRON
RATING AND CHARACTERISTIC CURVES ( EDB101S THRU EDB106S )
FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
NONINDUCTIVE
10
NONINDUCTIVE
D.U.T
25 Vdc
(approx)
( - )
( - )
( + )
( + )
1
NON-
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
PULSE
GENERATOR
(NOTE 2)
NOTES:1 Rise Time = 7ns max. Input Impedance =
1 megohm. 22 pF.
2. Rise Time = 10ns max. Source Impedance =
50 ohms.
trr
+0.5A
0
-0.25A
-1.0A
1cm
SET TIME BASE FOR
10 ns/cm
FIG. 2 - TYPICAL FORWARD
CURRENT DERATING CURVE
AMBIENT TEMPERATURE (
)
2.0
1.0
0 25 50 75 100 125 150 175
0
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
FIG. 3 - TYPICAL REVERSE CHARACTERISTICS
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
TJ = 25
TJ = 100
TJ = 150
100
10
1.0
.1
.01
40
0
20
60
80
100
120 140
INSTANTANEOUS FORWARD VOLTAGE, (V)
0
.2
.4
.6
.8
1.0
1.2
1.4
.001
.01
.1
1.0
10
FIG. 4 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
Pulse Width = 300uS
1% Duty Cycle
TJ = 25
FIG. 6 - TYPICAL JUNCTION CAPACITANCE
REVERSE VOLTAGE, ( V )
200
100
60
40
20
10
6
4
2
1
.1
.2
.4
1.0
2
4
10
20 40
100
TJ = 25
FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
NUMBER OF CYCLES AT 60Hz
35
30
25
20
15
10
5
0
1
2
5
10
20
50
100
8.3ms Single Half Sine-Wave
(JEDED Method)


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