NSBC114EPDXV6T1G datasheet(7/14 Pages) ONSEMI

Part #	NSBC114EPDXV6T1G

Description	Dual Bias Resistor Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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NSBC114EPDXV6T1G, NSBC114EPDXV6T5G

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7

TYPICAL ELECTRICAL CHARACTERISTICS − NSBC124EPDXV6T1 NPN TRANSISTOR

Figure 12. VCE(sat) versus IC

Figure 13. DC Current Gain

Figure 14. Output Capacitance

Figure 15. Output Current versus Input Voltage

1000

10

IC, COLLECTOR CURRENT (mA)

TA =75°C

25

°C

-25

°C

100

10

1

100

75

°C

25

°C

100

0

Vin, INPUT VOLTAGE (VOLTS)

10

1

0.1

0.01

0.001

24

68

10

TA =-25°C

0

IC, COLLECTOR CURRENT (mA)

100

TA =-25°C

75

°C

10

1

0.1

10

20

30

40

50

25

°C

Figure 16. Input Voltage versus Output

Current

0.001

TA =-25°C

75

°C

25

°C

0.01

0.1

1

40

IC, COLLECTOR CURRENT (mA)

0

20

50

0

10

203040

4

3

2

1

0

VR, REVERSE BIAS VOLTAGE (VOLTS)

IC/IB = 10

VCE = 10 V

f = 1 MHz

IE = 0 V

TA = 25°C

VO = 5 V

VO = 0.2 V

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NSBC114EPDXV6T1G Datasheet(PDF) 7 Page - ON Semiconductor

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