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NP0640SCMCT3G Datasheet(PDF) 4 Page - ON Semiconductor |
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NP0640SCMCT3G Datasheet(HTML) 4 Page - ON Semiconductor |
4 / 7 page NP−SCMC Series http://onsemi.com 4 ELECTRICAL PARAMETER/RATINGS DEFINITIONS Symbol Parameter VDRM Repetitive Peak Off−state Voltage V(BO) Breakover Voltage IDRM Off−state Current I(BO) Breakover Current IH Holding Current VT On−state Voltage IT On−state Current ITSM Nonrepetitive Peak On−state Current IPPS Nonrepetitive Peak Impulse Current VD Off−state Voltage ID Off−state Current Figure 1. Voltage Current Characteristics of TSPD VT IPPS ITSM IT ID IH −Voltage +Voltage −I +I I(BO) IDRM VD V(BO) VDRM Off−State Region TIME (ms) 0 50 0 100 tr = rise time to peak value tf = decay time to half value tr tf Peak Value Half Value 1 10 100 0.1 1 10 100 1000 Figure 2. Nonrepetitive On−State Current vs. Time (ITSM) Figure 3. Nonrepetitive On−State Impulse vs. Waveform (IPPS) CURRENT DURATION (s) Detailed Operating Description The TSPD or Thyristor Surge Protection Device are specialized silicon based overvoltage protectors, used to protect sensitive electronic circuits from damaging overvoltage transient surges caused by induced lightning and powercross conditions. The TSPD protects by switching to a low on state voltage when the specified protection voltage is exceeded. This is known as a “crowbar” effect. When an overvoltage occurs, the crowbar device changes from a high−impedance to a low−impedance state. This low−impedance state then offers a path to ground, shunting unwanted surges away from the sensitive circuits. This crowbar action defines the TSPD’s two states of functionality: Open Circuit and Short Circuit. Open Circuit – The TSPD must remain transparent during normal circuit operation. The device looks like an open across the two wire line. Short Circuit – When a transient surge fault exceeds the TSPD protection voltage threshold, the devices switches on, |
Similar Part No. - NP0640SCMCT3G |
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Similar Description - NP0640SCMCT3G |
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