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NLU1G04CMX1TCG Datasheet(PDF) 3 Page - ON Semiconductor |
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NLU1G04CMX1TCG Datasheet(HTML) 3 Page - ON Semiconductor |
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3 / 8 page  NLU1G04 http://onsemi.com 3 DC ELECTRICAL CHARACTERISTICS Symbol Parameter Conditions VCC (V) TA = 25 5C TA = +855C TA = -555C to +125 5C Unit Min Typ Max Min Max Min Max VIH Low-Level Input Voltage 1.65 0.75 x VCC 0.75 x VCC V 2.3 to 5.5 0.70 x VCC 0.70 x VCC VIL Low-Level Input Voltage 1.65 0.25 x VCC 0.25 x VCC 0.25 x VCC V 2.3 to 5.5 0.30 x VCC 0.30 x VCC 0.30 x VCC VOH High-Level Output Voltage VIN = VIH or VIL IOH = -50 mA 2.0 3.0 4.5 1.9 2.9 4.4 2.0 3.0 4.5 1.9 2.9 4.4 1.9 2.9 4.4 V VIN = VIH or VIL IOH = -4 mA IOH = -8 mA 3.0 4.5 2.58 3.94 2.48 3.80 2.34 3.66 V VOL Low-Level Output Voltage VIN = VIH or VIL IOL = 50 mA 2.0 3.0 4.5 0 0 0 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 V VIN = VIH or VIL IOL = 4 mA IOL = 8 mA 3.0 4.5 0.36 0.36 0.44 0.44 0.52 0.52 IIN Input Leakage Current 0 v VIN v 5.5 V 0 to 5.5 ±0.1 ±1.0 ±1.0 mA ICC Quiescent Supply Current 0 v VIN v VCC 5.5 1.0 10 40 mA AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 nS) Symbol Parameter VCC (V) Test Condition TA = 25 5C TA = +855C TA = -555C to +125 5C Unit Min Typ Max Min Max Min Max tPLH, tPHL Propagation Delay, Input A to Output Y 3.0 to 3.6 CL = 15 pF 4.5 7.1 8.5 10.0 ns CL = 50 pF 6.4 10.6 12.0 14.5 4.5 to 5.5 CL = 15 pF 3.5 5.5 6.5 8.0 CL = 50 pF 4.5 7.5 8.5 10.0 CIN Input Capacitance 4 10 10 10.0 pF CPD Power Dissipation Capacitance (Note 6) 5.0 8.0 pF 6. CPD is defined as the value of the internal equivalent capacitance which is calculated from the dynamic operating current consumption without load. Average operating current can be obtained by the equation ICC(OPR) = CPD • VCC • fin + ICC. CPD is used to determine the no-load dynamic power consumption: PD = CPD • VCC2 • fin + ICC • VCC. |
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