NDF08N60ZG datasheet(4/6 Pages) ONSEMI

Part #	NDF08N60ZG

Description	N-Channel Power MOSFET 600 V, 0.95 ?

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Manufacturer	ONSEMI [ON Semiconductor]

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NDF08N60Z, NDP08N60Z

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TYPICAL CHARACTERISTICS

0.1

1

10

100

0

50 100 150 200 250 300 350 400 450 500 550 600

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 7. Drain−to−Source Leakage Current

versus Voltage

TJ = 150°C

TJ = 125°C

0

250

500

750

1000

1250

1500

1750

2000

2250

2500

2750

0.01

0.1

1

10

100

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 8. Capacitance Variation

TJ = 25°C

VGS = 0 V

f = 1 MHz

Ciss

Coss

Crss

0

50

100

150

200

300

350

0

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

0

4

8

12

16

20

24

28

32

36

40

Qg, TOTAL GATE CHARGE (nC)

Figure 9. Gate−to−Source Voltage and

Drain−to−Source Voltage versus Total Charge

QT

QGD

QGS

VDS = 300 V

ID = 7.5 A

TJ = 25°C

VDS

VGS

250

1

10

100

1000

1

10

100

RG, GATE RESISTANCE (W)

Figure 10. Resistive Switching Time Variation

versus Gate Resistance

VDD = 300 V

ID = 7.5 A

VGS = 10 V

td(off)

tf

tr

td(on)

0.1

1.0

10.0

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

125°C

TJ = 150°C

25°C

−55°C

VSD, SOURCE−TO−DRAIN VOLTAGE (V)

Figure 11. Diode Forward Voltage versus

Current

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NDF08N60ZG Datasheet(PDF) 4 Page - ON Semiconductor

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