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NDF08N60ZG Datasheet(PDF) 4 Page - ON Semiconductor |
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NDF08N60ZG Datasheet(HTML) 4 Page - ON Semiconductor |
4 / 6 page NDF08N60Z, NDP08N60Z http://onsemi.com 4 TYPICAL CHARACTERISTICS 0.1 1 10 100 0 50 100 150 200 250 300 350 400 450 500 550 600 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 7. Drain−to−Source Leakage Current versus Voltage TJ = 150°C TJ = 125°C 0 250 500 750 1000 1250 1500 1750 2000 2250 2500 2750 0.01 0.1 1 10 100 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 8. Capacitance Variation TJ = 25°C VGS = 0 V f = 1 MHz Ciss Coss Crss 0 50 100 150 200 300 350 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 0 4 8 12 16 20 24 28 32 36 40 Qg, TOTAL GATE CHARGE (nC) Figure 9. Gate−to−Source Voltage and Drain−to−Source Voltage versus Total Charge QT QGD QGS VDS = 300 V ID = 7.5 A TJ = 25°C VDS VGS 250 1 10 100 1000 1 10 100 RG, GATE RESISTANCE (W) Figure 10. Resistive Switching Time Variation versus Gate Resistance VDD = 300 V ID = 7.5 A VGS = 10 V td(off) tf tr td(on) 0.1 1.0 10.0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 125°C TJ = 150°C 25°C −55°C VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 11. Diode Forward Voltage versus Current |
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