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NDD04N50Z-1G Datasheet(PDF) 1 Page - ON Semiconductor |
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NDD04N50Z-1G Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 9 page © Semiconductor Components Industries, LLC, 2010 July, 2010 − Rev. 0 1 Publication Order Number: NDD04N50Z/D NDP04N50Z, NDD04N50Z N-Channel Power MOSFET 500 V, 2.7 W Features • Low ON Resistance • Low Gate Charge • 100% Avalanche Tested • These Devices are Pb−Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol NDP NDD Unit Drain−to−Source Voltage VDSS 500 V Continuous Drain Current RqJC ID 3.4 3.0 A Continuous Drain Current RqJC, TA = 100°C ID 2.1 1.9 A Pulsed Drain Current, VGS @ 10 V IDM 14 12 A Power Dissipation RqJC PD 75 61 W Gate−to−Source Voltage VGS ±30 V Single Pulse Avalanche Energy, ID = 3.4 A EAS 120 mJ ESD (HBM) (JESD22−A114) Vesd 2800 V Peak Diode Recovery dv/dt 4.5 (Note 1) V/ns Continuous Source Current (Body Diode) IS 3.4 A Maximum Temperature for Soldering Leads TL 260 °C Operating Junction and Storage Temperature Range TJ, Tstg −55 to 150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. ID v 3.4 A, di/dt ≤ 200 A/ms, VDD ≤ BVDSS, TJ ≤ 150°C. http://onsemi.com See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. MARKING AND ORDERING INFORMATION VDSS RDS(on) (MAX) @ 1.5 A 500 V 2.7 W TO−220AB CASE 221A STYLE 5 DPAK CASE 369AA STYLE 2 1 2 3 4 IPAK CASE 369D STYLE 2 1 2 3 4 1 2 3 N−Channel G (1) D (2) S (3) |
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