NDP11N50ZG datasheet(4/7 Pages) ONSEMI

Part #	NDP11N50ZG

Description	N-Channel Power MOSFET 500 V, 0.52

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Manufacturer	ONSEMI [ON Semiconductor]

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NDF11N50Z, NDP11N50Z

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TYPICAL CHARACTERISTICS

0.1

1

10

100

0

50

100 150 200 250 300 350 400 450 500

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 7. Drain−to−Source Leakage Current

versus Voltage

TJ = 150°C

TJ = 125°C

0

250

500

750

1000

1250

1500

1750

2000

2250

2500

2750

3000

3250

0.01

0.1

1

10

100

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 8. Capacitance Variation

TJ = 25°C

VGS = 0 V

f = 1 MHz

Ciss

Coss

Crss

0

50

100

150

200

250

300

0

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

0

5

10

15

20

25

30

35

40

45

50

Qg, TOTAL GATE CHARGE (nC)

Figure 9. Gate−to−Source Voltage and

Drain−to−Source Voltage versus Total Charge

QGD

VDS = 250 V

ID = 10.5 A

TJ = 25°C

VDS

VGS

QT

QGS

1

10

100

1000

1

10

100

RG, GATE RESISTANCE (W)

VDD = 250 V

ID = 10.5 A

VGS = 10 V

td(off)

td(on)

tf

tr

Figure 10. Resistive Switching Time Variation

versus Gate Resistance

0.1

1

10

20

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

125°C

TJ = 150°C

25°C

−55°C

VSD, SOURCE−TO−DRAIN VOLTAGE (V)

Figure 11. Diode Forward Voltage versus

Current

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