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NDP11N50ZG Datasheet(PDF) 4 Page - ON Semiconductor |
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NDP11N50ZG Datasheet(HTML) 4 Page - ON Semiconductor |
4 / 7 page NDF11N50Z, NDP11N50Z http://onsemi.com 4 TYPICAL CHARACTERISTICS 0.1 1 10 100 0 50 100 150 200 250 300 350 400 450 500 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 7. Drain−to−Source Leakage Current versus Voltage TJ = 150°C TJ = 125°C 0 250 500 750 1000 1250 1500 1750 2000 2250 2500 2750 3000 3250 0.01 0.1 1 10 100 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 8. Capacitance Variation TJ = 25°C VGS = 0 V f = 1 MHz Ciss Coss Crss 0 50 100 150 200 250 300 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 0 5 10 15 20 25 30 35 40 45 50 Qg, TOTAL GATE CHARGE (nC) Figure 9. Gate−to−Source Voltage and Drain−to−Source Voltage versus Total Charge QGD VDS = 250 V ID = 10.5 A TJ = 25°C VDS VGS QT QGS 1 10 100 1000 1 10 100 RG, GATE RESISTANCE (W) VDD = 250 V ID = 10.5 A VGS = 10 V td(off) td(on) tf tr Figure 10. Resistive Switching Time Variation versus Gate Resistance 0.1 1 10 20 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 125°C TJ = 150°C 25°C −55°C VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 11. Diode Forward Voltage versus Current |
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