© Semiconductor Components Industries, LLC, 2010

April, 2010 − Rev. 1

1

Publication Order Number:

NDF04N62Z/D

NDF04N62Z, NDP04N62Z,

NDD04N62Z

N-Channel Power MOSFET

620 V, 1.8 W

Features

Parameter

Symbol

NDF

NDP

NDD

Unit

Drain−to−Source Voltage

620

V

Continuous Drain Current

4.4

(Note 2)

4.4

4.1

A

Continuous Drain Current

2.8

(Note 2)

2.8

2.6

A

Pulsed Drain Current,

18

(Note 2)

18

16

A

(Note 1)

28

96

83

W

Gate−to−Source Voltage

±30

V

Single Pulse Avalanche

120

mJ

ESD (HBM) (JESD22−A114)

3000

V

RMS Isolation Voltage

(t = 0.3 sec., R.H. ≤ 30%,

4500

−

−

V

Peak Diode Recovery

dv/dt

4.5 (Note 3)

V/ns

Continuous Source Current

(Body Diode)

4.0

A

Maximum Temperature for

Soldering Leads, 0.063″

(1.6 mm) from Case for

10 s Package Body for 10 s

300

260

°C

Operating Junction and

Storage Temperature Range

−55 to 150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface mounted on FR4 board using 1″ sq. pad size (Cu area = 1.127 in sq

[2 oz] including traces).

2. Limited by maximum junction temperature

This document contains information on some products that are still under development.

ON Semiconductor reserves the right to change or discontinue these products without

notice.

http://onsemi.com

620 V

1.8 Ω

TO−220FP

CASE 221D

STYLE 1

TO−220AB

CASE 221A

STYLE 5

DPAK

CASE 369AA

STYLE 2

1 2

3

4

IPAK

CASE 369D

STYLE 2

1

2

3

4

See detailed ordering and shipping information in the package

dimensions section on page 6 of this data sheet.

ORDERING INFORMATION

1

2

3

1

2

3

N−Channel

G (1)

D (2)

S (3)