NDP03N60Z datasheet(3/10 Pages) ONSEMI

Part #	NDP03N60Z

Description	N-Channel Power MOSFET 600 V, 3.3

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Manufacturer	ONSEMI [ON Semiconductor]

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NDF03N60Z, NDP03N60Z, NDD03N60Z

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TYPICAL CHARACTERISTICS

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

0.0

5.0

10.0

15.0

20.0

25.0

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 1. On−Region Characteristics

7.0 V

VGS = 10 V

6.5 V

6.0 V

5.5 V

5.0 V

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

3

4

56

78

9

10

VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 2. Transfer Characteristics

VDS = 25 V

TJ = 150°C

TJ = −55°C

TJ = 25°C

3.25

3.50

3.75

4.00

4.25

4.50

4.75

5.00

5.5

6.0

6.5

7.0

7.5

8.0

8.5

9.0

9.5

10.0

VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 3. On−Region versus Gate−to−Source

Voltage

ID = 1.2 A

TJ = 25°C

3.00

3.25

3.50

3.75

4.00

4.25

4.50

4.75

5.00

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

VGS = 10 V

TJ = 25°C

ID, DRAIN CURRENT (A)

Figure 4. On−Resistance versus Drain

Current and Gate Voltage

0.25

0.50

0.75

1.00

1.25

1.50

1.75

2.00

2.25

2.50

−50

−25

0

25

50

75

100

125

150

ID = 1.2 A

VGS = 10 V

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On−Resistance Variation with

Temperature

0.90

0.95

1.00

1.05

1.10

1.15

−50

−25

0

25

50

75

100

125

150

TJ, JUNCTION TEMPERATURE (°C)

Figure 6. BVDSS Variation with Temperature

ID = 1 mA

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