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NCV8570SN25T1G Datasheet(PDF) 2 Page - ON Semiconductor |
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NCV8570SN25T1G Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 12 page NCV8570 http://onsemi.com 2 Figure 2. Simplified Block Diagram Current Limit Bandgap Reference Voltage CE GND Active Discharge Vout Vin Cnoise PIN FUNCTION DESCRIPTION Pin No. DFN6 TSOP−5 Pin Name Description 1 3 CE Chip Enable: This pin allows on/off control of the regulator. To disable the device, connect to GND. If this function is not in use, connect to Vin. Internal 5 MW Pull Down resistor is connec- ted between CE and GND. 2, 5, EPAD 2 GND Power Supply Ground (Pins are fused for the DFN package) 3 1 Vin Power Supply Input Voltage 4 5 Vout Regulated Output Voltage 6 4 Cnoise Noise reduction pin. (Connect 100 nF or 10 nF capacitor to GND) MAXIMUM RATINGS Rating Symbol Value Unit Input Voltage (Note 1) Vin −0.3 V to 6 V V Chip Enable Voltage VCE −0.3 V to Vin +0.3 V V Noise Reduction Voltage VCnoise −0.3 V to Vin +0.3 V V Output Voltage Vout −0.3 V to Vin +0.3 V V Maximum Junction Temperature (Note 1) TJ(max) 150 °C Storage Temperature Range TSTG −55 to 150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. NOTE: This device series contains ESD protection and exceeds the following tests: Human Body Model 2000 V per MIL−STD−883, Method 3015 Machine Model Method 200 V This device series meets or exceeds AEC Q100 standard. THERMAL CHARACTERISTICS Rating Symbol Value Unit Package Thermal Resistance, DFN6: (Note 1) Junction−to−Lead (pin 2) Junction−to−Ambient RqJA 37 120 °C/W Package Thermal Resistance, TSOP−5: (Note 1) Junction−to−Lead (pin 5) Junction−to−Ambient RqJA 109 220 °C/W 1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area |
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