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NCV8535MN330R2G Datasheet(PDF) 4 Page - ON Semiconductor

Part # NCV8535MN330R2G
Description  Ultra High Accuracy, Low Iq, 500 mA Low Dropout Regulator with Enable
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NCV8535MN330R2G Datasheet(HTML) 4 Page - ON Semiconductor

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NCV8535
http://onsemi.com
4
PIN FUNCTION DESCRIPTION
Fixed Version
Pin No.
Pin Name
Description
1, 2
Vout
Regulated output voltage. Bypass to ground with Cout w 1.0 mF.
3
SENSE
For output voltage sensing, connect to Pins 1 and 2.
4
GND
Power Supply Ground
7
NR
Noise Reduction Pin. This is an optional pin used to further reduce noise.
8
SD
Shutdown pin. When not in use, this pin should be connected to the input pin.
9, 10
Vin
Power Supply Input Voltage
5, 6
NC
Not Connected
EPAD
EPAD
Exposed thermal pad should be connected to ground.
Adjustable Version
1, 2
Vout
Regulated output voltage. Bypass to ground with Cout w 1.0 mF.
3
Adj
Adjustable pin; reference voltage = 1.25 V.
4
GND
Power Supply Ground
7
NR
Noise Reduction Pin. This is an optional pin used to further reduce noise.
8
SD
Shutdown pin. When not in use, this pin should be connected to the input pin.
9, 10
Vin
Power Supply Input Voltage
5, 6
NC
Not Connected
EPAD
EPAD
Exposed thermal pad should be connected to ground.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Input Voltage
Vin
−0.3 to +16
V
Output Voltage
Vout
−0.3 to Vin +0.3 or 10 V*
V
Shutdown Pin Voltage
Vsh
−0.3 to +16
V
Junction Temperature Range
TJ
−40 to +150
°C
Storage Temperature Range
Tstg
−55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
NOTE: This device series contains ESD protection and exceeds the following tests:
Human Body Model (HBM) tested per AEC−Q100−002 (EIA/JESD22−A114)
Machine Model (MM) tested per AEC−Q100−003 (EIA/JESD22−A115)
Charged Device Model (CDM) tested per EIA/JESD22−C101
*Which ever is less. Reverse bias protection feature valid only if Vout − Vin ≤ 7 V.
THERMAL CHARACTERISTICS
Characteristic
Test Conditions (Typical Value)
Unit
Min Pad Board (Note 1)
1, Pad Board (Note 1)
Junction−to−Air, qJA
215
66
°C/W
Junction−to−Pin, yJL2
55
17
°C/W
1. As mounted on a 35 x 35 x 1.5 mm FR4 Substrate, with a single layer of a specified copper area of 2 oz (0.07 mm thick) copper traces and
heat spreading area. JEDEC 51 specifications for a low and high conductivity test board recommend a 2 oz copper thickness. Test conditions
are under natural convection or zero air flow.


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