NCV8570MN330R2G datasheet(4/12 Pages) ONSEMI

Part #	NCV8570MN330R2G

Description	200 mA, Ultra Low Noise, High PSRR, BiCMOS RF LDO Regulator

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Manufacturer	ONSEMI [ON Semiconductor]

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NCV8570

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ELECTRICAL CHARACTERISTICS

(Vin = Vout + 0.5 V, VCE = 1.2 V, Cin = 0.1 mF, Cout = 1 mF, Cnoise = 10 nF, TA = −40°C to 85°C, unless otherwise specified (Note 2))

Characteristic

Unit

Max

Typ

Min

Symbol

Test Conditions

TIMING

Turn−on Time

Iout = 150 mA

Cnoise = 10 nF

Cnoise = 100 nF

ton

−

0.4

4

−

ms

Turn−off Time

Cnoise = 10 nF/100 nF

Iout = 1 mA

Iout = 10 mA

toff

−

800

200

−

ms

2. Performance guaranteed over the indicated operating temperature range by design and/or characterization, production tested at

TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.

3. Contact factory for other voltage options.

4. Guaranteed by design and characterization.

5. Characterized when output voltage falls 100 mV below the regulated voltage at Vin = Vout + 1 V if Vout < 2.5 V, then VDO = Vin − Vout at Vin = 2.5 V.

6. Measured when output voltage falls 100 mV below the regulated voltage at Vin = Vout + 0.5 V if Vout < 2.5 V, then VDO = Vin − Vout at Vin = 2.5 V.

7. Expected to disable device when CE pin is floating.

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NCV8570MN330R2G Datasheet(PDF) 4 Page - ON Semiconductor

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