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NCV8440STT1G Datasheet(PDF) 1 Page - ON Semiconductor

Part # NCV8440STT1G
Description  Protected Power MOSFET 2.6 A, 52 V, N?묬hannel, Logic Level, Clamped MOSFET w/ ESD Protection
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NCV8440STT1G Datasheet(HTML) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2009
December, 2009 − Rev. 5
1
Publication Order Number:
NCV8440/D
NCV8440
Protected Power MOSFET
2.6 A, 52 V, N−Channel, Logic Level,
Clamped MOSFET w/ ESD Protection
Benefits
High Energy Capability for Inductive Loads
Low Switching Noise Generation
Features
Diode Clamp Between Gate and Source
ESD Protection − HBM 5000 V
Active Over−Voltage Gate to Drain Clamp
Scalable to Lower or Higher RDS(on)
Internal Series Gate Resistance
These are Pb−Free Devices
Applications
Automotive and Industrial Markets:
Solenoid Drivers, Lamp Drivers, Small Motor Drivers
NCV Prefix for Automotive and Other Applications Requiring Site
and Control Changes
Gate
(Pin 1)
Overvoltage
Protection
ESD Protection
http://onsemi.com
SOT−223
CASE 318E
STYLE 3
DRAIN
GATE
DRAIN
SOURCE
AYW
F9N05 G
G
A
= Assembly Location
Y
= Year
W
= Work Week
G
= Pb−Free Package
12
3
4
VDSS
(Clamped)
RDS(ON) TYP
ID MAX
52 V
95 mW @ 10 V
2.6 A
Source (Pin 3)
Drain (Pins 2, 4)
(Note: Microdot may be in either location)
1 = Gate
2 = Drain
3 = Source
MARKING
DIAGRAM
Device
Package
Shipping
ORDERING INFORMATION
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NCV8440STT1G
SOT−223
(Pb−Free)
1000/Tape & Reel
NCV8440STT3G
SOT−223
(Pb−Free)
4000/Tape & Reel


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